Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device

A temperature control method for controlling an apparatus which includes a process chamber, a heating apparatus having at least one heating zone for heating a treatment target provided in said process chamber, and first temperature detectors provided at least one for each zone for detecting heating temperatures provided by said heating apparatus at first predetermined locations,

• wherein said heating apparatus is controlled on the basis of first detected temperatures detected by said first temperature detectors and a first target temperature for said first detected temperatures, and
• wherein a plurality of second temperature detectors are disposed at second predetermined locations the number of which is larger than that of said heating zones and which are closer to said treatment target than said first predetermined locations, said second temperature detectors being operable to detect heating temperatures provided by said heating apparatus,
• said method comprising:
• comparing second detected temperatures detected by said second temperature detectors with a second target temperature for the second detected temperatures to obtain corrective values for said first target temperature;
• and
• correcting said first target temperature by said corrective values to perform temperature control.

A thermal treatment apparatus, comprising:

• a process chamber;
• a heating apparatus having at least two heating zones and being subjected to temperature control in such a manner that temperatures detected at predetermined locations equal a target temperature therefor;
• a plurality of temperature detectors for detecting temperatures at predetermined locations the number of which is larger than the number of said heating zones and at least one of which is in each of said heating zones;
• and
• a control device for controlling said heating apparatus in such a manner that said target temperature falls between a maximum value and a minimum value of a plurality of temperatures detected by means of said plurality of temperature detectors.

A method of manufacturing a semiconductor device, in which a target substrate is subjected to a heating process by controlling a heating apparatus having at least two heating zones in such a manner that temperatures detected at predetermined locations equal a target temperature therefor,

• said method comprising:
• detecting temperatures at predetermined locations the number of which is larger than the number of said heating zones and at least one of which is in each of said heating zones;
• and
• controlling said heating apparatus in such a manner that said target temperature falls between a maximum value and a minimum value of a plurality of temperatures detected at a plurality of detected predetermined locations.