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US 2002/0054745 A1Published application
Method for forming an asymmetric nitride laser diode
AssigneeXerox Corporation
InventorsChristian G. Van de Walle, David P. Bour, Michael A. Kneissl, Linda T. Romano
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Abstract
A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.
Claims11
An asymmetric waveguide nitride laser diode structure comprising:
- an active layer having a first and second surface;
- a transition layer in contact with said first surface of said active layer;
- a p-cladding layer disposed adjacent to said transition layer;
- and
- an n-type layer in contact with said second surface of said active layer.
2 more elements
A method for forming an asymmetric waveguide nitride laser diode comprising the steps of:
- providing an active layer having a first and second surface;
- placing a transition layer in contact with said first surface of said active layer;
- placing a p-cladding layer adjacent to said transition layer;
- and
- having an n-type layer in contact with said second surface of said active layer.
2 more elements
Dependencies are inferred from the claim text.