Semiconductor light emitting element and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsSatoshi Kamiyama, Masakatsu Suzuki, Takeshi Uenoyama, Kiyoshi Ohnaka, Akira Takamori, Masaya Mannoh, Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Toshiya Fukuhisa, Yasuhito Kumabuchi
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Abstract
The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
Claims60
A semiconductor laser comprising an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
A method for fabricating a semiconductor laser comprising the step of forming an active layer made of a hexagonal-system compound semiconductor in a c-axis direction, wherein the active layer is formed so that anisotropic strain is generated in a c plane.
A semiconductor light emitting element comprising:
- a semiconductor substrate;
- a stripe groove formed on a principal plane of the semiconductor substrate;
- and
- a semiconductor light emitting layer formed on the other principal plane of the semiconductor substrate.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- forming a stripe-shaped groove on a principal plane of a semiconductor substrate;
- and
- forming a light emitting element structure on the other principal plane of the semiconductor substrate.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- forming a stripe-shaped mask on a principal plane of a semiconductor substrate;
- etching the semiconductor substrate selectively using the mask;
- depositing material having a thermal expansion coefficient different from that of the semiconductor substrate on the semiconductor substrate selectively using the mask;
- and
- forming a light emitting element structure on the other principal plane of the semiconductor substrate.
A semiconductor light emitting element comprising:
- a semiconductor substrate;
- a stripe-shaped member formed on a principal plane of the semiconductor substrate, the member being made of a material having a thermal expansion coefficient different from that of the semiconductor substrate;
- and
- a semiconductor light emitting layer formed on the other principal plane of the semiconductor substrate.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- forming a stripe-shaped member on a principal plane of a semiconductor substrate, the member being made of a material having a thermal expansion coefficient different from that of the semiconductor substrate;
- and
- forming a light emitting element structure on the other principal plane of the semiconductor substrate.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- forming a light emitting element structure on a surface of a semiconductor substrate;
- and
- forming a stripe-shaped member on the other surface of the semiconductor substrate at 300° C. or more, the member being made of a material having a thermal expansion coefficient different from that of the semiconductor substrate.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- forming a light emitting element structure on a principal plane of a semiconductor substrate;
- forming a stripe-shaped member on the other surface of the semiconductor substrate, the member being made of a material having a thermal expansion coefficient different from that of the semiconductor substrate;
- and
- heat-treating the semiconductor substrate at 500° C. or more.
A semiconductor light emitting element comprising:
- a semiconductor substrate;
- a first metal formed on a principal plane of the semiconductor substrate;
- a stripe-shaped second metal formed on the first metal;
- and
- a light emitting element structure formed on the semiconductor substrate.
A method for fabricating the semiconductor light emitting element comprising the steps of:
- forming a light emitting element structure on a principal plane of a semiconductor substrate;
- depositing a first metal on the other principal plane of the semiconductor substrate;
- and
- depositing a stripe-shaped second metal on the first metal.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- attaching a semiconductor substrate to a surface of a body which is part of a curved surface of a cylinder;
- and
- forming a light emitting element structure on the semiconductor substrate.
A semiconductor light emitting element comprising:
- a substrate having a principal plane;
- and
- a wurtzite-type AlGaInN compound semiconductor formed on the substrate,
- wherein the substrate is made of a material of which thermal expansion coefficient is anisotropic in the principal plane.
A semiconductor light emitting element comprising a substrate having a principal plane and a wurtzite-type AlGaInN compound semiconductor formed on the substrate, wherein the substrate is made of a material of which thermal expansion coefficient is greater in a first direction in the principal plane and smaller in a second direction vertical to the first direction than the thermal expansion coefficient of the wurtzite-type AlGaInN compound semiconductor.
A semiconductor light emitting element comprising a wurtzite-type AlGaInN compound semiconductor where a total of a thermal strain in a first direction in a substrate plane and a thermal strain in a second direction perpendicular to the first direction generated when the element is cooled from a growth temperature to room temperature is zero.
A semiconductor light emitting element comprising:
- an active layer made of a wurtzite-type compound semiconductor;
- a pair of carrier confinement layers sandwiching the active layer;
- and
- a stripe-shaped strain generating layer having a lattice constant different from that of the pair of carrier confinement layers.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- placing a semiconductor light emitting element having a double-hetero structure on an anisotropic crystal;
- and
- securing the semiconductor light emitting element to the anisotropic crystal at 100° C. or more.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- placing a semiconductor light emitting element having a double-hetero structure on a bimetal;
- and
- securing the semiconductor light emitting element to the bimetal at 100° C. or more.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- placing a semiconductor light emitting element having a double-hetero structure on a sub-mount;
- applying stress to the semiconductor light emitting element from a top surface or a side face thereof;
- and
- securing the semiconductor light emitting element to the sub-mount.
A method for fabricating an AlGaInN semiconductor light emitting element including a substrate having a step and an AlGaInN double-hetero structure formed on the substrate, the method comprising the steps of:
- forming at least two strip grooves on an AlGaInN thin film to obtain a mesa structure;
- and
- forming a multilayer structure including the AlGaInN double-hetero structure on the entire top surface of the substrate including the inside of the at least two stripe grooves so that a crystal mixture ratio of AlGaInN on a flat surface of the mesa structure is different from that on a slope surface of the mesa structure.
A method for fabricating an AlGaInN semiconductor light emitting element including a substrate having a step and an AlGaInN double-hetero structure formed on the substrate, the method comprising the steps of:
- forming a stripe groove on an AlGaInN thin film to obtain a concave groove structure;
- and
- forming a multilayer structure including the AlGaInN double-hetero structure on the entire top surface of the substrate including the inside of the stripe groove so that a crystal mixture ratio of AlGaInN on a flat surface of the concave groove structure is different from that on a slope surface of the concave groove structure.
A method for fabricating a nitride compound semiconductor comprising the step of forming a nitride compound semiconductor by vapor phase epitaxy while selectively irradiating the nitride compound semiconductor, so as to form an irradiated portion and a non-irradiated portion having different lattice constants.
A method for fabricating a nitride compound semiconductor comprising the steps of:
- forming a nitride compound semiconductor by vapor phase epitaxy while selectively irradiating the nitride compound semiconductor, so as to form an irradiated portion and a non-irradiated portion having different lattice constants;
- and
- forming a nitride compound semiconductor by vapor phase epitaxy at a temperature higher than a temperature used for the former growth step.
A semiconductor light emitting element comprising:
- a substrate;
- a first cladding layer formed on the substrate, an area of a plane parallel to the substrate being smaller than an area of a surface of the substrate;
- a second cladding layer formed on the first cladding layer, an area of a plane parallel to the substrate being larger than the area of the first cladding layer, the second cladding layer being made of crystal having a lattice constant different from that of the first cladding layer;
- an active layer formed on the second cladding layer;
- and
- a third cladding layer formed on the active layer.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- forming a first cladding layer on a substrate;
- forming a second cladding layer on the first cladding layer;
- forming an active layer on the second cladding layer;
- forming a third cladding layer on the active layer;
- and
- etching so that the first cladding layer can be etched faster than the substrate, the second cladding layer, the active layer, and the third cladding layer.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- forming a first cladding layer on a substrate;
- forming a second cladding layer on the first cladding layer;
- forming an active layer on the second cladding layer;
- forming a third cladding layer on the active layer;
- forming an insulating film on faces of the substrate, the first cladding layer, the second cladding layer, the active layer, and the third cladding layer vertical to a depositing direction;
- removing a portion of the insulating film so as to expose the side face of the first cladding layer;
- and
- etching so that the first cladding layer can be etched faster than the insulating film.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- forming a first conductive semiconductor on a substrate;
- forming an insulating semiconductor on the first conductive semiconductor, the insulating semiconductor having a lattice constant different from that of the first conductive semiconductor;
- forming a semiconductor layer of a double-hetero structure on the insulating semiconductor;
- and
- etching the first conductive semiconductor by immersing the substrate, the first conductive semiconductor, and the insulating semiconductor in an electrolytic solution and attaching a positive electrode and a negative electrode to the first conductive semiconductor or the insulating semiconductor for applying a voltage between the electrodes.
A semiconductor light emitting element comprising:
- a substrate;
- a semiconductor crystal nucleus deposited on the substrate;
- a thin film spirally formed around the crystal nucleus in parallel to the substrate;
- a first cladding layer formed on the thin film;
- an active layer formed on the first cladding layer;
- and
- a second cladding layer formed on the active layer.
A method for fabricating a semiconductor light emitting element comprising the steps of:
- forming a semiconductor crystal nucleus on a substrate under a first pressure condition by vapor phase epitaxy;
- forming a thin film around the crystal nucleus spirally in parallel to the substrate under a second pressure condition;
- forming a first cladding layer under a third pressure condition;
- forming an active layer on the first cladding layer under the third pressure condition;
- and
- forming a second cladding layer on the active layer under the third pressure condition.
A semiconductor light emitting device comprising a base having a concave portion and a semiconductor light emitting element formed in the concave portion,
- wherein an active layer of the semiconductor light emitting element is made of a hexagonal-system compound semiconductor, and
- anisotropic strain is generated in a c plane of the active layer due to stress from the base.
A semiconductor light emitting device comprising a semiconductor light emitting element and a stress applying portion for applying stress to an active layer of the semiconductor light emitting element,
- wherein the active layer of the semiconductor light emitting element is made of a hexagonal-system compound semiconductor, and
- anisotropic strain is applied to a c plane of the active layer from the stress applying portion.
An epitaxial method for epitaxially growing crystal on a substrate causing lattice mismatching, wherein lattice strain generated in an epitaxial layer due to the lattice mismatching between crystals of the substrate and the epitaxial layer is concentrated in a specific direction of the epitaxial layer, so as to generate anisotropic strain in the epitaxial layer.
Dependencies are inferred from the claim text.