US 2002/0053941 A1Published application

Transmission gate

AssigneeKabushiki Kaisha Toshiba

InventorsHiroshi Shigehara, Masanori Kinugasa, Toshinobu Hisamoto

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Abstract

Two terminals of each of transistors (P1, N1) are connected between two terminals (A, B). A body effect compensation circuit (COMP-P1) for the transistor (P1) and a body effect compensation circuit (COMP-N1) for the transistor (N1) are arranged. The back gates of transistors (P1P, P2P) in the circuit (COMP-P1) and transistors (P1N, P2N) in the circuit (COMP-N1) are commonly connected to the back gate of the transistor (P1). The back gates of transistors (N1N, N2N) in the circuit (COMP-N1) and transistors (N1P, N2P) in the circuit (COMP-P1) are commonly connected to the back gate of the transistor (N1). With this structure, in transferring a signal from one terminal (A or B) to the other terminal (B or A) or vice verse, the signal potential is transferred to the back gates of the transistors (P1, N1) at a high speed to increase the signal transfer speed.

Claims20

Dependent claims

A transmission gate comprising:

first and second terminals;
a first transistor of a first conductivity type which has a drain and source connected between said first and second terminals and is rendered conductive by a first signal;
a second transistor of a second conductivity type which has a drain and source connected between said first and second terminals and is rendered conductive by a second signal corresponding to an inverted signal of said first signal;
a first body effect compensation circuit for reducing the difference between a potential of a back gate and a potential of the source of said first transistor when said first transistor is ON;
and
a second body effect compensation circuit for reducing the difference between a potential of a back gate and a potential of the source of said second transistor when said second transistor is ON,
said first body effect compensation circuit including a third transistor of the second conductivity type having a drain and source connected between the back gate of said first transistor and said first terminal, and a fourth transistor of the second conductivity type having a drain and source connected between the back gate of said first transistor and said second terminal, and
said second body effect compensation circuit including a fifth transistor of the first conductivity type having a drain and source connected between the back gate of said second transistor and said first terminal, and a sixth transistor of the first conductivity type having a drain and source connected between the back gate of said second transistor and said second terminal,
wherein back gates of both said third and fourth transistors are connected to the back gate of said second transistor, and back gates of both said fifth and sixth transistors are connected to the back gate of said first transistor.

6 more elements

A transmission gate comprising:

first and second terminals;
a first transistor of a first conductivity type which has a drain and source connected between said first and second terminals and is rendered conductive by a first signal;
a first body effect compensation circuit for reducing the difference between a potential of a well of the first conductivity type and a potential or potentials of at least one of said first and second terminals when said first transistor is ON;
and
a second body effect compensation circuit for reducing the difference between a potential of a back gate and a potential of the source of said first transistor when said first transistor is ON,
said first body effect compensation circuit including a second transistor of a first conductivity type having a drain and source connected between the well and said first terminal, and a third transistor of the first conductivity type having a drain and source connected between the well and said second terminal, and said second body effect compensation circuit including a fourth transistor of the second conductivity type having a drain and source connected between the back gate of said first transistor and said first terminal, and a fifth transistor of the second conductivity type having a drain and source connected between the back gate of said first transistor and said second terminal,
wherein back gates of both said second and third transistors are connected to the back gate of said first transistor, and back gates of both said fourth and fifth transistors are connected to the well.

4 more elements

A transmission gate comprising:

first and second terminals;
a first transistor of a first conductivity type which has a drain and source connected between said first and second terminals, and is rendered conductive by a first signal;
a second transistor of a second conductivity type which has a drain and source connected between said first and second terminals, and is rendered conductive by a second signal corresponding to an inverted signal of said first signal;
a first body effect compensation circuit for reducing the difference between a potential of a back gate and a potential of the source of said first transistor when said first transistor is ON;
and
a second body effect compensation circuit for reducing the difference between a potential of a back gate and a potential of the source of said second transistor when said second transistor is ON,
said first body effect compensation circuit including a third transistor of the second conductivity type having a drain and source connected between the back gate of said first transistor and said first terminal, and
said second body effect compensation circuit including a fourth transistor of the first conductivity type having a drain and source connected between the back gate of said second transistor and said first terminal,
wherein a back gate of said third transistor is connected to the back gate of said second transistor, and a back gate of said fourth transistor is connected to the back gate of said first transistor.

6 more elements

A transmission gate comprising:

first and second terminals;
a first transistor of a first conductivity type which has a drain and source connected between said first and second terminals, and is rendered conductive by a first signal;
a second transistor of a second conductivity type which has a drain and source connected between said first and second terminals, and is rendered conductive by a second signal corresponding to an inverted signal of said first signal;
a first body effect compensation circuit for reducing the difference between a potential of a back gate and a potential of the source of said first transistor when said first transistor is ON;
and
a second body effect compensation circuit for reducing the difference between a potential of a back gate of said second transistor and a potential of the back gate of said first transistor when said second transistor is ON.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/029,299Filed 28 Dec 2001
Priority: JP 9-10760124 Apr 1997
Published: 9 May 2002
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H03K 17/162
In field-effect transistor switches: without feedback from the output circuit to the control circuit
H03K 17/063
Modifications for ensuring a fully conducting state: in field-effect transistor switches
H03K 17/6872
The output circuit comprising more than one controlled field-effect transistor: using complementary field-effect transistors
H03K 2217/0018
Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00: special modifications or…

Family

Application09/699,488Continuation · filed 31 Oct 2000
Application10/029,299Continuation · filed 28 Dec 2001
US 6,335,653 B1Related patent
US 6,462,611 B2Related patent
US 2002/0053941 A1This patent

From the US filing history. Foreign family members aren’t listed.