Light emitting device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorSatoshi Seo
Life of this patent
Estimating the term…
Abstract
There is provided a light emitting device and electric equipment, which are bright and have low consumption power and are low in costs. When an organic EL material is made present in a metal oxide porous body including a heavy atom, phosphorescence light emitting of the organic EL material in which only fluorescence is generally observed can be promoted. Thus, an organic EL element in which phosphorescence light emitting is produced is obtained. With respect to this element, since phosphorescence can be used, light emitting efficiency is high. Also, since a conventional organic EL material can be used, it can be manufactured with a low cost. A light emitting device and electric equipment are manufactured using this organic EL element.
Claims55
A light emitting device comprising:
- an organic electroluminescence element comprising an anode layer, a cathode layer, and an organic compound layer provided between said anode layer and said cathode layer,
- wherein at least one of said anode layer and said cathode layer has an oxide film formed by anodization processing and said oxide film is in contact with said organic compound layer.
A light emitting device comprising:
- an organic electroluminescence element comprising an anode layer, a cathode layer, and an organic compound layer provided between said anode layer and said cathode layer,
- wherein at least one of said anode layer and said cathode layer is made of a metal having an atomic number equal to or larger than rubidium and has an oxide film formed by anodization processing and said oxide film is in contact with said organic compound layer.
A light emitting device comprising:
- an organic electroluminescence element comprising an anode layer, a cathode layer, and an organic compound layer provided between said anode layer and said cathode layer,
- wherein said anode layer is made of at least one kind of metal element selected from a group consisting of group 4, group 5, and group 6 of a periodic table and has an oxide film formed by anodization processing and said oxide film is in contact with said organic compound layer.
A light emitting device comprising:
- an organic electroluminescence element comprising an anode layer, a cathode layer, and an organic compound layer provided between said anode layer and said cathode layer,
- wherein a metal oxide layer formed by a sol-gel method is provided between at least one of the anode layer and said cathode layer and said organic compound layer.
A light emitting device comprising:
- an organic elecrtroluminescence element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer,
- wherein a metal oxide layer formed by a sol-gel method is provided between at least one of said anode layer and said cathode layer and said organic compound layer and said metal oxide layer comprises a metal element having an atomic number equal to or larger than rubidium.
A light emitting device comprising:
- an organic electroluminescence element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer,
- wherein a metal oxide layer formed by a sol-gel method is provided between said anode layer and said organic compound layer and said anode layer and said metal oxide layer comprises at least one kind of metal element selected from a group consisting of group 4, group 5, and group 6 of a periodic table.
A light emitting device comprising:
- an organic electroluminescence element comprising an anode layer, a cathode layer, and an organic compound layer provided between said anode layer and said cathode layer,
- wherein the organic compound layer contains zeolite or is in contact with the zeolite.
A light emitting device comprising:
- an organic electroluminescence element comprising an anode layer, a cathode layer, and an organic compound layer provided between said anode layer and said cathode layer,
- wherein said organic compound layer contains zeolite or is in contact with said zeolite and said zeolite includes a metal element having an atomic number equal to or larger than rubidium.
A light emitting device comprising:
- an organic electroluminescence element comprising an anode layer, a cathode layer, and an organic compound layer provided between said anode layer and said cathode layer,
- wherein said organic compound layer contains zeolite or is in contact with said zeolite and said zeolite includes one of an alkali metal element and an alkali earth metal element.
A light emitting device comprising:
- an anode layer;
- a cathode layer;
- an organic compound layer provided between said anode layer and said cathode layer;
- and
- a metal oxide film contacting with said organic compound layer, said metal oxide film comprising an oxide of a metal,
- wherein said metal is selected from the group consisting of an element having an atomic number equal to or larger than rubidium, and groups 4 to 6 elements of a periodic table.
A light emitting device comprising:
- an anode layer;
- a cathode layer over said anode layer;
- an organic compound layer provided between said anode layer and said cathode layer;
- a metal oxide film on said anode layer;
- said metal oxide film comprising an oxide of a metal,
- wherein said metal is selected from the group consisting of an element having an atomic number equal to or larger than rubidium, and groups 4 to 6 elements of a periodic table.
32 A light emitting device comprising:
- a cathode layer;
- an anode layer over said cathode layer;
- an organic compound layer provided between said anode layer and said cathode layer;
- a metal oxide film on said cathode layer;
- wherein said metal oxide film comprises at least one metal element having an atomic number equal to or larger than rubidium.
A light emitting device according to claim 32, wherein said metal oxide film is formed by sol-gel method.
A light emitting device according to claim 32, wherein said metal oxide porous is formed by anodization processing.
An electronic equipment comprising the light emitting device according to claim 32, wherein said electronic equipment is selected from the group consisting of an organic electroluminescence display, a video camera, a digital camera, an image reproduction apparatus, a portable computer, a personal computer, a mobile telephone, and a acoustic equipment.
A light emitting device comprising:
- an anode layer;
- a cathode layer;
- an organic compound layer provided between said anode layer and said cathode layer;
- and
- a metal oxide porous contacting with said organic compound layer, said metal oxide porous comprising an oxide of a metal,
- wherein said metal is selected from the group consisting of an element having an atomic number equal to or larger than rubidium, and groups 4 to 6 elements of a periodic table.
41 A light emitting device comprising:
- an anode layer;
- a cathode layer over said anode layer;
- an organic compound layer provided between said anode layer and said cathode layer;
- a metal oxide porous on said anode layer, said metal oxide porous comprising an oxide of a metal,
- wherein said metal is selected from the group consisting of an element having an atomic number equal to or larger than rubidium, and group 4 to 6 elements of a periodic table.
A light emitting device according to claim 41, wherein said metal oxide porous is formed by anodization processing.
A light emitting device according to claim 41, wherein said metal oxide porous is formed by sol-gel method.
A light emitting device according to claim 41, wherein said metal is one of titanium, tantalum, and tungsten.
An electronic equipment comprising the light emitting device according to claim 41, wherein said electronic equipment is selected from the group consisting of an organic electroluminescence display, a video camera, a digital camera, an image reproduction apparatus, a portable computer, a personal computer, a mobile telephone, and a acoustic equipment.
A light emitting device comprising:
- a cathode layer;
- an anode layer over said cathode layer;
- an organic compound layer provided between said anode layer and said cathode layer;
- a metal oxide porous on said cathode layer, said metal oxide porous comprising an oxide of a metal,
- wherein said metal has an atomic number equal to or larger than rubidium.
A method for fabricating a light emitting device comprising the steps of:
- forming an anode layer;
- anodizing a surface of said anode layer;
- forming an organic compound layer on said anode layer;
- and
- forming a cathode layer on said organic compound layer,
- wherein said anode layer comprises at least one metal element selected from the group consisting of an element having a metal having an atomic number equal to or larger than rubidium, and groups 4 to 6 elements of a periodic table.
A method for fabricating a light emitting device comprising the steps of:
- forming a cathode layer;
- anodizing a surface of said cathode layer;
- forming an organic compound layer on said cathode layer;
- and
- forming an anode layer on said organic compound layer,
- wherein said cathode layer comprises at a metal selected from the group consisting of groups 4 to 6 elements of a periodic table.
A method for fabricating a light emitting device comprising the steps of:
- forming an anode layer;
- forming a metal oxide film on said anode layer by sol-gel method;
- forming an organic compound layer on said metal oxide film;
- and
- forming a cathode layer on said organic compound layer,
- wherein said metal oxide film comprises at least one metal selected from the group consisting of a metal having an atomic number equal to or larger than rubidium, and groups 4 to 6 elements of a periodic table.
A method for fabricating a light emitting device comprising the steps of:
- forming a cathode layer;
- forming a metal oxide film on said cathode layer by sol-gel method;
- forming an organic compound layer on said metal oxide film;
- and
- forming an anode layer on said organic compound layer,
- wherein said metal oxide film comprises a metal element having an atomic number equal to or larger than rubidium.
Dependencies are inferred from the claim text.