Piezoelectric element, process for producing the same and ink jet recording head
AssigneeKansai Research Institute
InventorToshimi Fukui
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AssigneeKansai Research Institute
InventorToshimi Fukui
Estimating the term…
Provided are a piezoelectric element by which a pressure of a better displacement is obtained, a process for producing the same and an ink jet recording head having the piezoelectric element. A piezoelectric element comprising a substrate (2), a lower electrode (3) formedon the substrate (2), piezoelectric film (7)[(4)(5)(6)] each containing Pb (Zr1−xTix)O3 (0<x<1) and a valence compensation-type perovskite represented by formula Pb(A1/3 B2/3)O3 (wherein A and B each represent a valence compensation-type perovskite) as basic components formed on the lower electrode (3), and an upper electrode (8) formed on the piezoelectric film (7). In the piezoelectric film, the concentration of A and/or B is changed in the thickness direction of the piezoelectric film, and the maximum value of the concentration of A and/or B is shown in a region within 60% from the upper electrode side in the thickness direction of the piezoelectric film. It is suited for an ink jet recording head.
A piezoelectric element comprising a substrate, a lower electrode formed on the substrate, a piezoelectric film containing Pb (Zr1−x Tix)O3 (0<x<1) and a valence compensation-type perovskite represented by general formula Pb(A1/3 B2/3)O3 (wherein A and B each represent a metal element capable of forming a valence compensation-type perovskite) as basic components formed on the lower electrode, and an upper electrode formed on the piezoelectric film, wherein in any arbitrary regions in the thickness direction of the piezoelectric film, Pb (Zr1−x Tix)O3 and the valence compensation-type perovskite represented by the general formula Pb(A1/3 B2/3)O3 are contained, in any arbitrary regions in the thickness direction of the piezoelectric film, a concentration of the valence compensation-type perovskite represented by the general formula Pb(A1/3 B2/3)O3 is within a range of 20 to 40 mole %, and in the piezoelectric film, a concentration of A and/or B is changed in the thickness direction of the piezoelectric film and the maximum value of the concentration of A and/or B is shown in a region within 60% from the upper electrode side in the thickness direction of the piezoelectric film.
Dependencies are inferred from the claim text.