Semiconductor device and method of manufacture thereof, circuit board and electronic instrument
AssigneeSeiko Epson Corporation
InventorNOBUAKI HASHIMOTO
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device, comprising: a first step of interposing an anisotropic conductive material 16 between a surface 18 of a substrate 12 on which an interconnect pattern 10 is formed, and a surface 24 of a semiconductor chip 20 on which electrodes 22 is formed; and a second step in which pressure is applied between the semiconductor chip 20 and the substrate 12, the interconnect pattern 10 and electrodes 22 are electrically connected, and the anisotropic conductive material 16 is caused to surround at least a part of a lateral surface 28 of the semiconductor chip 20.
Claims15
A method of manufacturing a semiconductor device comprising:
- a first step of interposing an adhesive between a surface of a substrate on which an interconnect pattern is formed and a surface of a semiconductor chip on which electrodes are formed;
- and
- a second step in which pressure is applied between said semiconductor chip and said substrate, said interconnect pattern and said electrodes are electrically connected, and said adhesive is caused to surround at least a part of a lateral surface of said semiconductor chip.
A semiconductor device, comprising:
- a semiconductor chip having electrodes;
- a substrate having an interconnect pattern;
- and an adhesive;
- wherein said electrodes and said interconnect pattern are electrically connected;
- and
- wherein said adhesive is interposed between a surface of said substrate on which said interconnect pattern is formed and a surface of said semiconductor chip on which said electrodes are formed, so as to cover at least a part of a lateral surface of said semiconductor chip.
Dependencies are inferred from the claim text.