Protection circuit device using MOSFETS and a method of manfacturing the same
AssigneeSanyo Electric Co., Ltd.
InventorsNoriaki Sakamoto, Yoshiyuki Kobayashi, Hirokazu Fukuda, Hiroki Etou, Kouji Takahashi
Life of this patent
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Abstract
A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.
Claims20
A protection circuit device using MOSFETs comprising:
- a MOSFET chip integrating two MOSFET in one chip, formed so as to be switched with a control IC;
- and
- conductive circuit portion having a conductive path of a desired pattern formed on an insulating board,
- wherein each gate electrode and each source electrode of said both MOSFET in one chip are bonded on the desired conductive path, and conductive material is put on a common drain electrode provided at a back face of said MOSFET chip.
A protection circuit device using MOSFETs comprising:
- a MOSFET chip integrating two MOSFET in one chip, formed as to be switched with a control IC;
- and
- conductive circuit portion having a conductive path of a desired pattern separated by an insulating resin buried in a trench, wherein
- each gate electrode and each source electrode of a MOSFET chip integrating said both MOSFET in one chip are bonded on the desired conductive path, and conductive material is put on a common drain electrode provided at a back face of said MOSFET chip.
A method for manufacturing a protection circuit device using MOSFETs comprising the steps of:
- forming a trench on a surface of a conductive foil, except for a region to be a conductive path, a thickness of the trench is thinner than that of the conductive;
- bonding each gate electrode and each source electrode of a MOSFET chip integrating two MOSFETs on said desired conductive path in one chip;
- bonding conductive material on a common electrode of the MOSFET;
- molding said MOSFET chip so as to be covered with insulating resin and to fill into said trench;
- and
- removing said conductive foil of part of thickness where said trench is not provided.
12 A method for manufacturing a protection circuit device using MOSFETs, further comprising the step of:
- removing uniformly said conductive foil from a back face so that a back face of said conductive path and said insulating resin embedded between said trench, are substantially flat face.
Dependencies are inferred from the claim text.