Semiconductor device
AssigneesHitachi, Ltd., Hitachi ULSI Systems Co., Ltd.
InventorsKumiko Takikawa, Satoshi Tanaka, Satoshi Kayama, Yuichi Saito, Norio Hayashi
Life of this patent
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Abstract
In a differential low-noise amplifier built in a semiconductor integrated circuit for a dual-band wireless transceiver, impedance components of wire bonding and package that occur in emitters are reduced and a gain is improved. Ground pins of amplifiers of the differential amplifier forming a pair are arranged adjacent to each other. Input pins and ground pins of the same amplifier are arranged adjacent to each other. Signals of the adjacent pins are allowed to have inverse phases, and trans-coupling between the pins is utilized so as to reduce impedance of the transistor emitters.
Claims20
A semiconductor device including a semiconductor circuit chip, a plurality of lead pins connected to said semiconductor circuit chip and a package sealing said semiconductor circuit chip, said semiconductor circuit chip having formed therein two unit amplifiers, said two unit amplifiers together forming one differential amplifier, wherein:
- a first power supply line of a first of said two unit amplifiers is connected to at least two of said plurality of lead pins;
- a first power supply line of a second of said two unit amplifiers is connected to at least two of said plurality of lead pins;
- and
- each of said lead pins connected to said first power supply line of said first unit amplifier is arranged adjacent to each of said lead pins connected to said first power source line of said second unit amplifier on the 1:1 basis.
A semiconductor device including a semiconductor circuit chip having a differential amplifier, a plurality of lead pins connected to said semiconductor circuit chip and a package sealing said semiconductor circuit chip, wherein:
- said differential amplifier has two unit amplifiers together forming a pair;
- a first power supply line of each of said unit amplifiers is connected to one of said lead pins;
- and
- said pins connected to said first power supply lines of said two unit amplifiers are arranged adjacent to said lead pins connected to input lines of said unit amplifiers.
A semiconductor device for a wireless transceiver, including a differential low-noise amplifier interposed between a reception mixer for mixing a reception signal from an antenna and a signal from a voltage controlled oscillator and said antenna, and a plurality of lead pins connected to said differential low-noise amplifier, wherein:
- said differential low-noise amplifier has two unit amplifiers to which signals having mutually inverse phases are inputted;
- and
- said first power supply lines of said two unit amplifiers are connected to mutually different lead pins.
Dependencies are inferred from the claim text.