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US 2002/0053719 A1Published application
Semiconductor device and process for the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTomohide Terashima
Life of this patent
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Abstract
The main purpose is to provide a semiconductor device which has a field plate wherein the electric field concentration at a step part can be eliminated and a higher withstanding voltage can be gained. A field plate is provided on a substrate. The field plate has a step part which bends toward the downward direction from the surface of the substrate.
Claims9
A semiconductor device including:
- a substrate;
- and
- a field plate provided on the above substrate,
- wherein said field plate has a step part which bends downward from the surface of said substrate to the downward direction.
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A semiconductor device including:
- a substrate of which a part of the surface is indented;
- an oxide film provided in said indented part of the surface of said substrate;
- a first field plate provided on said substrate;
- and
- a second field plate which is provided on said oxide film and which has a part which extends in the horizontal direction,
- wherein the following inequity is achieved when the distance in the horizontal direction between said first field plate and the part which extends in said horizontal direction of said second field plate is assumed to be 1,
- the depth of the bottom of said oxide film from the surface of said substrate is assumed to be x, and
- the depth of the part which extends in the horizontal direction of said second field plate is denoted as y:
- y≧x(1−α)/(1+αx2)
- in the above expression, α=specific dielectric constant of said oxide film/specific dielectric constant of said substrate.
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The process for a semiconductor device including:
- the first step of forming a field oxide film on a surface of a substrate through a LOCOS method;
- the second step of shaving off part of the edge parts of said field oxide film so that part of the surface of said substrate is exposed;
- the third step of oxidizing again the part of the surface of said substrate which has been exposed in said second step;
- and
- the fourth step of forming a field plate on said substrate so as to cover the part again oxidized of said field oxide film.
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Dependencies are inferred from the claim text.