Flexible interconnections with dual-metal dual-stud structure
AssigneeInternational Business Machines Corporation
InventorsJAMES G. RYAN, BADIH EL-KAREH
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Abstract
A metal interconnect having a high conductivity and high resistance to metal migration failure is formed of two layers of metal or alloy (such as TI/CuAlSi) with a dielectric interposed therebetween and a connection made between the layers by a conductive material, preferably in the form of a plug or stud formed in an aperture of an inter-level dielectric, at ends of the interconnect. A high precision metal-to-metal capacitor can be formed from the same layers by forming separate connections to each of the layers. The topography of the interconnect (and capacitor) is of reduced severity and facilitates planarization of an overlying inter-level dielectric.
Claims16
An electronic device including an interconnect and a capacitor, said interconnect and said capacitor including respective portions of a first metal layer, a dielectric layer and a second metal layer, said dielectric layer being interposed between said first metal layer and said second metal layer, said electronic device further including a common connection to both said first metal layer and said second metal layer of said interconnect and a separate connection to each of said first metal layer and said second metal layer of said capacitor.
A method of making an electronic device including the steps of
- depositing a first metal layer and a dielectric layer on a surface,
- patterning said first metal layer and said dielectric layer to form a first aperture,
- depositing a second metal layer on said dielectric layer,
- patterning said second metal layer to form a second aperture overlying said first aperture, and
- connecting said first metal layer and said second metal layer at an edge of said second aperture.
An electronic device formed by a process including the steps of
- depositing a first metal layer and a dielectric layer on a surface,
- patterning said first metal layer and said dielectric layer to form a first aperture,
- depositing a second metal layer on said dielectric layer,
- patterning said second metal layer to form a second aperture overlying said first aperture, and
- connecting said first metal layer and said second metal layer at an edge of said second aperture.
Dependencies are inferred from the claim text.