Semiconductor device and signal processing system having SOI MOS transistor

Abstract

A semiconductor device and a signal processing system having a metal oxide semiconductor (MOS) transistor with a silicon-on-insulator (SOI) structure are provided. The semiconductor device and the signal processing system include a main MOS transistor and an assistance MOS transistor. The main MOS transistor includes a first gate interconnection for receiving an external signal, first source/drain regions of a first conductivity type, and a body. The assistance MOS transistor includes a second gate interconnection and second source/drain regions of a second conductivity type opposite to the first conductivity type. The assistance MOS transistor selectively floats or grounds the body according to the external signal. The first gate interconnection and the second gate interconnection are electrically connected to each other by an interconnection layer.

Dependencies are inferred from the claim text.