US 2002/0053687 A1 · Wiring structure of semiconductor device

Abstract

A wiring structure of a semiconductor device and a method for manufacturing the same are provided. The wiring structure according to the present invention includes a body formed of a first conductive material in a first insulating film on a semiconductor substrate and a protrusion formed of a second conductive material in a second insulating film formed on the first insulating film, connected to the upper surface of the body, formed to have a width less than that of the body, and having a planarized upper surface.

Claims8

Dependent claims

A wiring structure of a semiconductor device, comprising:

a body formed of a first conductive material in a first insulating film on a semiconductor substrate;
and
a protrusion formed of a second conductive material in a second insulating film formed on the first insulating film, the protrusion being connected to an upper surface of the body and formed to have a width less than a width of the body, and including a planarized upper surface.

Dependencies are inferred from the claim text.

Facts

Application

10/006,303Filed 6 Dec 2001

Priority

KR 98-2952522 Jul 1998

Published

9 May 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10B 10/00
Static random access memory [sram] devices
H10D 84/0133
Manufacturing their source or drain regions, e.g. silicided source or drain regions: manufacturing common source or drain regions between multiple…
H10D 84/0149
The components including insulated gates, e.g. IGFETs: manufacturing their interconnections or electrodes, e.g. source or drain electrodes

Abstract

Facts

Application

10/006,303Filed 6 Dec 2001

Priority

KR 98-2952522 Jul 1998

Published

9 May 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10B 10/00
Static random access memory [sram] devices
H10D 84/0133
Manufacturing their source or drain regions, e.g. silicided source or drain regions: manufacturing common source or drain regions between multiple…
H10D 84/0149
The components including insulated gates, e.g. IGFETs: manufacturing their interconnections or electrodes, e.g. source or drain electrodes

Wiring structure of semiconductor device

Life of this patent

Abstract

Claims8

Wiring structure of semiconductor device

Life of this patent

Abstract

Claims8