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OwnerSameer Pendharkar, Taylor R. Eflandinventors
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A method of minimizing parasitics in an MOS device caused by the formation of a bipolar transistor within the MOS devices and the device, primarily for a polyphase bridge circuit. For the low side device, a substrate of a first conductivity type is provided having a first buried layer of opposite conductivity type thereon. A second buried layer of the first conductivity type is formed over the first buried layer and a further layer of the first conductivity type is formed over the second buried layer. A sinker extending through the further layer to the first buried layer is formed to isolate the second buried layer and the further layer from the substrate. Formation of an MOS device in the further layer including source, drain and gate regions is completed and the sinker is connected to a source terminal of the device. The second buried layer is formed either by coimplanting a p-type dopant and an n-type dopant with one of the dopant having a higher diffusion rate than the other or by implanting and diffusing one of the two dopants first to form one layer and then implanting and diffusing the other dopant to form the second layer. The preferred dopants are boron as the p-type dopant and antimony as the n-type dopant.
A method of minimizing parasitics in an MOS device caused by the formation of a bipolar transistor within the MOS device which comprises the steps of:
6 The method of claim 4 further including a power supply having first and second terminals, said first terminal being positive relative to said second terminal, said source region being coupled to said second terminal.
The method of claim 6 further including a load, said drain region being coupled to said load.
The method of claim, 5 further including a power supply having first and second terminals, said first terminal being positive relative to said second terminal, said drain region being coupled to said first terminal.
16 An MOS device which comprises.
The device of claim 16 wherein said sinker is coupled to said source region.
An MOS device which comprises:
The device of claim 16 wherein each of said sinkers is coupled to a different one of said source regions.
An MOS device which comprises:
Dependencies are inferred from the claim text.