Semiconductor light emitting element
AssigneeKabushiki Kaisha Toshiba
InventorsHideto Sugawara, Koichi Nitta
Life of this patent
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Abstract
In a light emitting element using nitride compound semiconductors, an active layer made of a mixed crystal containing In additionally contains at least Al or B as a component of the mixed crystal to improve the thermal resistance of the crystal and the reliability of the element characteristics. Thus, the semiconductor light emitting element has a sufficient lifetime and permits the emission wavelength to be freely selected from a wider wavelength range including blue, green and orange.
Claims20
A semiconductor light emitting element comprising:
- an active layer made of a nitride compound semiconductor which contains In (indium), Ga (gallium), N (nitrogen) and B (boron), and having an energy gap smaller than 3.42 eV, said active layer emitting light by band-to-band recombination.
A semiconductor light emitting element comprising:
- a substrate;
- a first cladding layer formed on top surface of said substrate, said first cladding layer being made of an n-type nitride compound semiconductor;
- an active layer formed on said first cladding layer;
- and
- a second cladding layer formed on said active layer, said second cladding layer being made of a p-type nitride compound semiconductor,
- said active layer being made of a nitride compound semiconductor which contains In (indimum), Ga (gallium), N (nitrogen) and B(boron), and having an energy gap smaller than that of GaN, said active layer emitting light by band-to-band recombination.
A semiconductor light emitting element comprising:
- an active layer made of a nitride compound semiconductor which contains In (indium), Ga (gallium), N (nitrogen), Al (aluminum) and B (boron), and having an energy gap smaller than 3.42 eV, said active layer emitting light by band-to-band recombination.
A semiconductor light emitting element comprising:
- a substrate;
- a first cladding layer formed on top surface of said substrate, said first cladding layer being made of an n-type nitride compound semiconductor;
- an active layer formed on said first cladding layer;
- and
- a second cladding layer formed on said active layer, said second cladding layer being made of a p-type nitride compound semiconductor,
- said active layer being made of a nitride compound semiconductor which contains In (indimum), Ga (gallium), N (nitrogen), Al (aluminum) and B(boron), and having an energy gap smaller than that of GaN, said active layer emitting light by band-to-band recombination.
Dependencies are inferred from the claim text.