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AssigneeSumitomo Chemical Company, Limited
InventorsYasushi Iyechika, Tomoyuki Takada, Yoshinobu Ono
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The present invention provides for a Group III-V compound semiconductor which has a high quality and less defects, a method of manufacturing the same, and further a light emitting element with an excellent emission characteristic which incorporates such a Group III-V compound semiconductor. [1] A Group III-V compound semiconductor having a structure in which a fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula GaaAlbN (a+b=1, 0≦a≦1, 0≦b≦1), a fourth-layer having a lower impurity concentration, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gaa.Alb.N (a′+b′=1, 0≦a′≦1, 0≦b′≦1), and a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=1, 0<x<1, 0<y<1, 0≦z<1), a second-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gax.Aly.N (x′+y′=1, 0<x′≦1, 0≦y′<1), and a third-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gax.Aly.N (x″+y″=1, 0<x″≦1, 0≦y″<1), are stacked one atop the other in this order, and in which the first-layer has a thickness in the range between 5 Åand 90 Å. [2] A method of manufacturing a Group III-V compound semiconductor in which the third-layer is grown at a temperature exceeding 1,000° C. after growing the first-layer, the method being characterized in that the second-layer is grown at 1,000° C. or a lower temperature after growing the first-layer but before growing the third-layer. [3] A light emitting element which is characterized in using the Group III-V compound semiconductor as defined in [1].
A Group III-V compound semiconductor having a structure in which a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=0, 1<x<1, 0<y<1, 0≦z<1), a second-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gax.Aly.N (x′+y′=1, 0<x′≦1, 0≦y′<1), and a third layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gax.Aly.N (x″+y″=1, 0<x″≦1, 0≦y″<1), are stacked one atop the other in this order, the Group III-V compound semiconductor being characterized in that the first-layer has a thickness in the range between 5 Å and 90 Å.
A Group III-V compound semiconductor having a structure in which a fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula GaaAlbN (a+b=1, 0≦a≦1, 0≦b≦1), and a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=1, 0<x<1, 0<y<1, 0≦z<1), are stacked one atop the other in this order, the Group III-V compound semiconductor being characterized in that the first-layer has a thickness in the range between 5 Å and 90 Å.
A Group III-V compound semiconductor having a structure in which a fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula GaaAlbN (a+b=1, 0≦a≦1, 0≦b≦1), a fourth-layer having a lower impurity concentration than the fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gaa.Alb.N (a′+b′=1, 0≦a′≦1, 0≦b′≦1), and a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=1, 0<x<1, 0<y<1, 0≦z<1), are stacked one atop the other in this order, the Group III-V compound semiconductor being characterized in that the first-layer has a thickness in the range between 5 Å and 90 Å.
A Group III-V compound semiconductor having a structure in which a fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula GaaAlbN (a+b=1, 0≦a≦1, 0≦b≦1), a fourth-layer having a lower impurity concentration than the fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gaa.Alb.N (a′+b′=1, 0≦a′≦1, 0≦b′≦1), and a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=1, 0<x<1, 0<y<1, 0≦z<1), a second-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gax.Aly.N (x′+y′=1,0<x′≦1, 0≦y′<1), and a third-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gax.Aly.N (x″+y″=1, 0<x″≦1, 0≦y″<1), are stacked one atop the other in this order, the Group III-V compound semiconductor being characterized in that the first-layer has a thickness in the range between 5 Å and 90 Å.
A method of manufacturing a Group III-V compound semiconductor in which a third-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gax.Aly.N (x″+y″=1, 0<x″≦1, 0≦y″<1), is grown at a temperature exceeding 1,000° C., after growing a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by the general formula InxGayAlzN (x+y+z=1, 0<x<1, 0<y<1, 0≦z<1), the method being characterized in that a second-layer, which is formed by a Group III-V compound semiconductor which is expressed by the general formula Gax.Aly.N (x′+y′=1, 0<x′≦1, 0≦y′<1), is grown at 1,000° C. or a lower temperature, after growing the first-layer but before growing the third-layer.
Dependencies are inferred from the claim text.