Nitride semiconductor device
AssigneeNichia Corporation
InventorTokuya Kozaki
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Abstract
In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes in; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.
Claims23
A nitride semiconductor device having a structure wherein an active layer of a quantum well structure, which has a well layer made of a nitride semiconductor that includes In and a barrier layer made of a nitride semiconductor, is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer,
- wherein said active layer has, as said barrier layer, a first barrier layer arranged in a position nearest to said p-type nitride semiconductor layer and a second barrier layer that is different from the first barrier layer;
- and wherein said first barrier layer does not substantially include an n-type impurity while said second barrier layer includes an n-type impurity.
The nitride semiconductor device according to claim 7, wherein said second barrier layer is arranged in the outermost position close to said n-type nitride semiconductor layer within said active layer.
Dependencies are inferred from the claim text.