Semiconductor thin film, semiconductor device and manufacturing method thereof

An SRAM comprising:

• a substrate;
• a pair of cross-coupled driver transistors formed over the substrate;
• a pair of access transistors;
• a pair of bit lines electrically connected to the cross-coupled driver transistors through the access transistors, respectively;
• and
• a bit line electrically connected to the pair of access transistors,
• wherein at least each of the access transistors comprises a crystalline semiconductor film formed on an insulating surface over the substrate, said crystalline semiconductor film having a mono domain region in which a channel formation region is formed.

An SRAM comprising:

• a substrate;
• a pair of cross-coupled driver transistors formed over the substrate;
• a pair of access transistors;
• a pair of bit lines electrically connected to the cross-coupled driver transistors through the access transistors, respectively;
• and
• a bit line electrically connected to the pair of access transistors,
• wherein at least each of the cross-coupled driver transistors comprises a crystalline semiconductor film formed on an insulating surface over the substrate, said crystalline semiconductor film having a mono domain region in which a channel formation region is formed, and
• wherein a crystallization direction of said crystalline semiconductor film is substantially in parallel with a major surface of the substrate.

An SRAM comprising:

• a substrate;
• a pair of cross-coupled driver transistors formed over the substrate;
• a pair of access transistors;
• a pair of bit lines electrically connected to the cross-coupled driver transistors through the access transistors, respectively;
• and
• a bit line electrically connected to the pair of access transistors,
• wherein at least each of the access transistors comprises a crystalline semiconductor film formed on an insulating surface over the substrate, said crystalline semiconductor film having a mono domain region in which a channel formation region is formed, and
• wherein a crystallization direction of said crystalline semiconductor film is substantially in parallel with a major surface of the substrate

An SRAM comprising:

• a substrate;
• an insulating film formed on the substrate, said insulating film having a protrusion extending in one direction;
• a pair of cross-coupled driver transistors formed over the substrate;
• a pair of access transistors;
• a pair of bit lines electrically connected to the cross-coupled driver transistors through the access transistors, respectively;
• and
• a bit line electrically connected to the pair of access transistors,
• wherein at least each of the cross-coupled driver transistors comprises a crystalline semiconductor film formed on the insulating film, said crystalline semiconductor film having a mono domain region in which a channel formation region is formed.

An SRAM comprising:

• a substrate;
• an insulating film formed on the substrate, said insulating film having a protrusion extending in one direction;
• a pair of cross-coupled driver transistors formed over the substrate;
• a pair of access transistors;
• a pair of bit lines electrically connected to the cross-coupled driver transistors through the access transistors, respectively;
• and
• a bit line electrically connected to the pair of access transistors,
• wherein at least each of the access transistors comprises a crystalline semiconductor film formed on the insulating film, said crystalline semiconductor film having a mono domain region in which a channel formation region is formed.