Semiconductor device and method for producing the same
AssigneeNEC LCD Technologies, Ltd.
InventorsAkira Fujita, Choei Sugitani
Life of this patent
Estimating the term…
Abstract
An interterminal anti-short-circuiting pattern is formed in an upper metal wire included in a connection terminal 3, for connecting to external driving LSI and the like, located on the projected portion of a bottom glass substrate 2. This pattern includes recess 4 and island 5 on which a contact hole 12a is formed through a protective insulating film. The protective insulating film has high residence to water penetration. Spread of the corrosion can be shut off by the recess surrounding the island. Short circuit occurrence due to interterminal current leak can be inhibited under high moisture conditions in the semiconductor device used for active matrix display, e.g. LCD panel.
Claims12
A semiconductor device, comprising plural lines of metal wires formed on a substrate each having a connection terminal positioned at the end of said substrate for connecting to an external driving circuit for applying voltage independently to every pixel electrode:
- wherein each of said metal wires at the position of said connection terminal is provided with an interterminal anti-short-circuiting pattern comprising conductive island and recess(es) located around said island;
- wherein the surface of said metal wire except at least a portion of said island but including the inside of said recess(es) thereon are covered with a protective insulating film;
- wherein a contact hole is formed of the uncovered portion with said protective insulating film on said island;
- and
- wherein a transparent conductive film is deposited on the surface of said protective insulating film and inside said contact hole including the top face of said island.
A semiconductor device, comprising plural lines of metal wires formed on a substrate each having a connection terminal positioned at the end of said substrate for connecting to an external driving circuit for applying voltage independently to every pixel electrode:
- wherein each of said metal wires at the position of said connection terminal is provided with an interterminal anti-short-circuiting pattern comprising conductive island and recess(es) located around said island;
- wherein the surface of said metal wire except at least a portion of said island but including the inside of said recess(es) thereon are covered with a protective insulating film;
- wherein a contact hole is formed of the uncovered portion with said protective insulating film on said island;
- wherein a bottomed pool arriving at said recess is provided through said protective insulating film adjacent to said contact hole;
- and
- wherein a transparent conductive film is deposited on the surface of said protective insulating film, including inside of said contact hole and said bottomed pool.
A semiconductor device, comprising plural lines of metal wires formed on a substrate each having a connection terminal positioned at the end of said substrate for connecting to an external driving circuit for applying voltage independently to every pixel electrode:
- wherein each of said metal wires at the position of said connection terminal comprises an upper metal wire and a lower metal wire, with an interlaminer insulating film being interposed between said substrate and said lower metal wire;
- wherein an interterminal anti-short-circuiting pattern comprising conductive island and recess(es) located around said island is provided at the same position of said upper and lower metal wires;
- wherein the surface of said metal wire except at least a portion of said island but including the inside of said recess thereon is covered with a protective insulating film;
- wherein contact hole is formed of the uncovered portion with said protective insulating film on said island;
- and
- wherein a transparent conductive film is deposited on the surface of said protective insulating film including inside said contact hole and the top face of said island.
A process for preparing a semiconductor device comprising plural lines of metal wires formed on a substrate each having a connection terminal positioned at the end of said substrate for connecting to an external driving circuit for applying voltage independently to every pixel electrode, comprising the steps of:
- depositing a metal film by vacuum deposition or sputtering and removing partially said metal film to form the predetermined pattern of said metal wire;
- forming an interterminal anti-short-circuiting pattern, comprising conductive islands and recess(es) located around said islands, at the position of said connection terminal to be formed;
- depositing a protective insulating film on the surface of said metal wire except at least a portion of said island but including the inside of said recess thereon to provide a contact hole of the uncovered portion with said protective insulating film on said island;
- and
- depositing a transparent conductive film on the surface of said protective insulating film including inside said contact hole and the top face of said island.
A process for preparing a semiconductor device comprising plural lines of metal wires formed on a substrate each having a connection terminal positioned at the end of said substrate for connecting to an external driving circuit for applying voltage independently to every pixel electrode, comprising the steps of:
- depositing a metal film by vacuum deposition or sputtering to form a predetermined pattern of said metal wire;
- forming an interterminal anti-short-circuiting pattern, comprising conductive islands and recess(es) located around said islands, at the position of said connection terminal to be formed;
- depositing a protective insulating film on the surface of said metal wire except at least a portion of said island but including the inside of said recess;
- providing a contact hole of the uncovered portion with said protective insulating film on said island;
- making a bottomed pool arriving at said recess through said protective insulating film adjacent to said contact hole;
- and
- depositing a transparent conductive film on the surface of said protective insulating film including the inside of said contact hole and the bottomed pool.
A process for preparing a semiconductor device comprising plural lines of metal wires formed on a glass substrate each having a connection terminal positioned at the end of said glass substrate for connecting to an external driving circuit for applying voltage independently to every pixel electrode, comprising the steps of:
- forming an interlaminer insulating film on said glass substrate by sputtering;
- depositing a metal film thereon by vacuum deposition or sputtering;
- etching said metal film so as to form matrix electrodes on the central part of said glass plate, at the same time, to form said connection terminal having an interterminal anti-short-circuiting pattern on the periphery of said glass substrate, wherein said central part being to be changed into a display part, said interterminal anti-short-circuiting pattern comprising a conductive island, recess(es) and at least a constricted part which links said island to said recess(es), said connection terminal being coupled with said electrode formed on said central part;
- forming a protective insulating film thereon by vacuum deposition or sputtering;
- removing by etching partially said protective insulating film formed on said islands of said connection terminal, and said protective insulating film and said interlaminer insulating film formed on said recess(es);
- depositing a transparent conductive film by vacuum deposition or sputtering;
- and
- etching said transparent conductive film into the predetermined shape of said connection terminal.
Dependencies are inferred from the claim text.