Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsKyoichi Suguro, Katsuya Okumura
Life of this patent
Estimating the term…
Abstract
The purpose of the present invention is to avoid a decrease in the mechanical strength of a Si substrate because of the repetition of ion-implantation and annealing processes. As ions are implanted while the Si substrate surface temperature is kept at as low as −60° C. or less. Then the Si substrate is heated to recover the implantation defects caused by the ion-implantation. Such a combination of the low temperature ion-implantation and the annealing processes is repeated as required.
Claims29
A method for manufacturing a semiconductor device comprising the steps of:
- implanting ions into a semiconductor substrate, said semiconductor substrate having a temperature lower than a predetermined temperature, and a surface of said semiconductor substrate not being frosted;
- and
- annealing said semiconductor substrate after said implanting step;
- wherein said predetermined temperature reduces the defect density of the annealed semiconductor substrate.
A method for manufacturing a semiconductor device comprising the steps of:
- implanting ions into a semiconductor substrate, said semiconductor substrate having a temperature lower than a predetermined temperature, and a surface of said semiconductor substrate not being frosted;
- and
- annealing said semiconductor substrate after said implanting step;
- wherein said predetermined temperature is 20° C.
A method for manufacturing a semiconductor device comprising the steps of:
- implanting ions to a semiconductor substrate under a predetermined condition;
- annealing said semiconductor substrate after said implanting step;
- wherein said predetermined condition is determined to keep a minimum strength of said semiconductor substrate larger than 500 Mpa after said steps of implanting and annealing are repeated at least two times.
An apparatus for manufacturing a semiconductor device comprising;
- a wafer stage for supporting a semiconductor substrate;
- an ion-implanting instrument for implanting ions to said semiconductor substrate on said wafer stage;
- a heat sink, provided at said wafer stage, for lowering the temperature of said semiconductor substrate;
- and
- a heat trap for trapping water molecules on a surface of the heat trap.
An apparatus for manufacturing a semiconductor device comprising;
- a wafer stage, provided in an end station, for supporting a semiconductor substrate;
- an ion-implanting instrument for implanting ions to said semiconductor substrate on said wafer stage;
- a heat sink, provided at said wafer stage, for lowering the temperature of the substrate;
- a heat trap, provided in said end station, for trapping water molecules on a surface of the heat trap;
- a heating source, provided in a heating chamber, for annealing said semiconductor substrate;
- and
- a carrier chamber for connecting said end station and said heating chamber.
A method of manufacturing a semiconductor device comprising the steps of:
- placing a semiconductor wafer in thermal contact with a heat sink;
- trapping water molecules on a heat trap in the same environment as the semiconductor wafer;
- implanting ions into the semiconductor substrate, said semiconductor substrate having a temperature lower than a predetermined temperature;
- and
- annealing said semiconductor substrate after said implanting step.
Dependencies are inferred from the claim text.