Seed layer repair
AssigneeShipley Company, L.L.C.
InventorsDenis Morrissey, Jeffrey M. Calvert, Robert D. Mikkola
Life of this patent
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Abstract
Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices. Also disclosed are electronic devices containing substantially continuous seed layers.
Claims22
A method of providing a metal seed layer substantially free of discontinuities disposed on a substrate comprising the step of contacting a metal seed layer disposed on a substrate with an electroplating bath comprising a) a source of metal ions;
- b) an electrolyte comprising two or more acids;
- c) and optionally one or more additives.
A method of manufacturing an electronic device comprising the step of contacting a metal seed layer disposed on a substrate with an electroplating bath comprising a) a source of metal ions;
- b) an electrolyte comprising two or more acids;
- c) and optionally one or more additives.
An article of manufacture comprising an electronic device substrate containing one or more apertures, each aperture containing a seed layer deposit obtained from an electroplating composition that comprises a) a source of metal ions;
- b) an electrolyte comprising two or more acids;
- c) and optionally one or more additives.
A method for removing excess material from a semiconductor wafer containing one or more apertures by using a chemical mechanical planarization process which comprises contacting the semiconductor wafer with a rotating polishing pad thereby removing the excess material from the semiconductor wafer;
- wherein the apertures contain a seed layer deposit obtained from an electroplating composition that comprises a) a source of metal ions;
- b) an electrolyte including two or more acids;
- c) and optionally one or more additives.
Dependencies are inferred from the claim text.