Titanium oxide film and production apparatus of titanium oxide film
AssigneeSharp Kabushiki Kaisha
InventorsKoichi Ui, Satoshi Okamoto, Tohru Nunoi
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Abstract
A titanium oxide film containing a dopant element formed on a silicon substrate by supplying a titanium compound for forming the titanium oxide film and a compound of a dopant element for a silicon semiconductor in a gaseous state to a surface of the silicon substrate heated to a predetermined temperature, wherein the concentration of the dopant element in the titanium oxide film becomes progressively higher from the surface of the titanium oxide film to the surface of the silicon substrate.
Claims9
A titanium oxide film containing a dopant element formed on a silicon substrate by supplying a titanium compound for forming the titanium oxide film and a compound of a dopant element for a silicon semiconductor in a gaseous state to a surface of the silicon substrate heated to a predetermined temperature, wherein the concentration of the dopant element in the titanium oxide film becomes progressively higher from the surface of the titanium oxide film to the surface of the silicon substrate.
A production apparatus of a titanium oxide film comprising heating means for a silicon substrate and dispersion heads for discharging independently a gaseous titanium compound for forming a titanium oxide film, a gaseous compound of a dopant element for a silicon semiconductor and an atmospheric gas, wherein a distance from bottom ends of discharge ports of the dispersion heads for the titanium compound and the atmospheric gas to a surface of the silicon substrate is greater than a distance from a bottom end of a discharge port of the dispersion head for the dopant element compound to the surface of the silicon substrate.
Dependencies are inferred from the claim text.