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US 2002/0053359 A1Published application
Nanostructured thermoelectric materials and devices
AssigneeMassachusetts Institute of Technology
InventorsTheodore C. Harman, Patrick J. Taylor, Michael P. Walsh
Life of this patent
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Abstract
Quantum-dot superlattice (QLSL) structures having improved thermoelectric properties are described. In one embodiment, PbSexTe1-x/PbTe QDSLs are provided having enhanced values of Seebeck coefficient and thermoelectric figure of merit (ZT) relative to bulk values. The structures can be combined into multi-chip devices to provide additional thermoelectric performance.
Claims7
A multi-element quantum dot superlattice device comprising:
- a first quantum dot superlattice element;
- and
- a second quantum dot superlattice element, said second quantum dot superlattice element disposed in a pre-determined physical orientation selected to match sample geometries of said first and second quantum dot superlattice elements and to reduce a radiation loss factor of said device, said second quantum dot superlattice element in thermal communication with said first quantum dot superlattice element.
Dependencies are inferred from the claim text.