Slicing of single-crystal films using ion implantation

A method for detaching a single-crystal film from a crystal structure, said method comprising the steps of:

• implanting ions into said crystal structure to form a damage layer within said crystal structure at an implantation depth below a surface of said crystal structure;
• bonding said surface of said crystal structure to a second substrate;
• and
• subjecting said damage layer to a rapid temperature increase to effect detachment of a single-crystal film from said crystal structure.

A method for enhancing the detachment of a single-crystal film from a bulk crystal structure, comprising:

• implanting ions into said bulk crystal structure to form a damage layer at an implantation depth below a top surface of said bulk crystal structure;
• rapid thermal annealing said ion-implanted bulk crystal structure;
• and
• chemically etching said damage layer within said annealed bulk crystal structure to effect detachment of said single-crystal film from said bulk crystal structure.

A method for enhancing the detachment of a single-crystal film from a ferroectric bulk crystal structure, comprising the steps of:

• implanting ions into said bulk crystal structure to form a damage layer at an implantation depth below a top surface of said bulk crystal structure;
• rapid thermal annealing said ion-implanted bulk crystal structure;
• and
• chemically etching said damage layer within said annealed bulk crystal structure to effect detachment of said single-crystal film from said bulk crystal structure.

A method for enhancing the detachment of a single-crystal film from a metal oxide bulk crystal structure, comprising the steps of:

• implanting ions into said bulk crystal structure to form a damage layer at an implantation depth below a top surface of said bulk crystal structure;
• rapid thermal annealing said ion-implanted bulk crystal structure;
• and
• chemically etching said damage layer within said annealed bulk crystal structure to effect detachment of said single-crystal film from said bulk crystal structure.

A method of fabricating an optoelectronic device, comprising:

• implanting ions into a crystal structure to form a damage layer at an implantation depth below a top surface of said crystal structure;
• chemically etching said damage layer to effect detachment of a single-crystal film from said crystal structure;
• and
• bonding said single-crystal film to a growth-compatible substrate.

A method of fabricating an optoelectronic device, comprising:

• implanting ions into a crystal structure to form a damage layer within said crystal structure at an implantation depth below a top surface of said crystal structure;
• subjecting said damage layer to a rapid temperature increase to effect detachment of said single-crystal film from said crystal structure;
• and
• bonding said single-crystal film to a growth-compatible substrate.

An optoelectronic device form by the method comprising:

• implanting ions into a crystal structure to form a damage layer at an implantation depth below a top surface of said crystal structure;
• chemically etching said damage layer to effect detachment of a single-crystal film from said crystal structure;
• and
• bonding said single-crystal film to a growth-compatible substrate.

An optoelectronic device form by the method comprising:

• implanting ions into a crystal structure to form a damage layer within said crystal structure at an implantation depth below a top surface of said crystal structure;
• subjecting said damage layer to a rapid temperature increase to effect detachment of said single-crystal film from said crystal structure;
• and
• bonding said single-crystal film to a growth-compatible substrate.