Method of deposition of a single-crystal silicon region
OwnerYvon Gris, Germaine Troillard +1inventors
InventorsYvon Gris, Germaine Troillard, Jocelyne Mourier
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Abstract
The present invention relates to a method of deposition of a silicon layer on a single-crystal silicon substrate, so that the silicon layer is a single-crystal layer, but of different orientation than the substrate, including the steps of defining a window on the substrate; creating inside the window interstitial defects with an atomic proportion lower than one for one hundred; and performing a silicon deposition in conditions generally corresponding to those of an epitaxial deposition, but at a temperature lower than 850° C.
Claims10
A method of deposition of a silicon layer on a single-crystal silicon substrate, so that the silicon layer is a single-crystal layer, but of different orientation than the substrate, including the steps of:
- defining a window on the substrate;
- creating inside the window interstitial defects with an atomic proportion lower than one for one hundred;
- and
- performing a silicon deposition in conditions generally corresponding to those of an epitaxial deposition, but at a temperature lower than 900° C.
Dependencies are inferred from the claim text.