Continuous crystal plate growth process and apparatus
AssigneeOptoscint, Inc.
InventorKiril A. Pandelisev
Life of this patent
Estimating the term…
Abstract
Reactive gas is released through a crystal source material or melt to react with impurities and carry the impurities away as gaseous products or as precipitates or in light or heavy form. The gaseous products are removed by vacuum and the heavy products fall to the bottom of the melt. Light products rise to the top of the melt. After purifying, dopants are added to the melt. The melt moves away from the heater and the crystal is formed. Subsequent heating zones re-melt and refine the crystal, and a dopant is added in a final heating zone. The crystal is divided, and divided portions of the crystal are re-heated for heat treating and annealing.
Claims81
Continuous crystal plate growth apparatus comprising a source of starter material, a valve for supplying material from the starter material source, a first, hot zone communicating with the valve for heating the material, a dopant source, a dopant controller connected to the dopant source and connected to the hot zone for supplying dopant into the material in the hot zone, a second reduced heat zone connected to the hot zone for reducing heat in the material and forming a solid crystal plate from the material, a receiver connected to the reduced heat zone for receiving solid plate from the second, reduced heat zone and advancing the solid plate, a lowered temperature heating zone adjacent the receiver for lowering temperature of the solid crystal plate on the receiver, an enclosure enclosing the zones and the solid crystal plate and a controlled gaseous environment within the enclosure.
Purification apparatus for crystal starter material, comprising a chamber having a bottom and side walls, a lid covering the chamber, an opening for introducing liquid or solid material into the chamber, an outlet near the bottom of the chamber for releasing crystal starter material from the chamber, a shut-off valve connected to the outlet for opening and closing the outlet, a source of reactive gas connected to the chamber and extending into a bottom of the chamber, a reactive gas release barrier near the bottom of the chamber for slowly releasing reactive gas into the crystal starter material, a gaseous space at the top of the chamber above the crystal starter material, an exhaust line connected to the space at the top of the chamber for withdrawing gas from the top of the chamber, and a heater adjacent the chamber for heating the chamber and the crystal starter material within the chamber.
Heating and purifying apparatus, comprising a chamber having an inlet and an outlet, a source of material connected to the inlet and a purified material discharge connected to the outlet, an enclosure having side walls, a bottom and a top, a heater connected to the enclosure, a reactive gas source, a gas valve connected to the gas source and a gas inlet tube connected to the valve, a gas distributor mounted in the chamber near the bottom, a gas releasing plate connected to the gas distributor for releasing the reactive gas from the inlet tube and the distributor into the material in the feeding and purifying apparatus, a heater connected to the chamber for heating material in the chamber, and a gas exhaust connected to an upper portion of the chamber for exhausting gas from an upper portion of the chamber.
Crystal growth apparatus comprising a support for supporting a growing crystal, a first zone heater adjacent the growing crystal for heating the growing crystal and liquefying the growing crystal, and a second zone heater spaced from the first zone heater along the growing crystal for re-liquefying the growing crystal.
Crystal growth apparatus comprising a chamber for holding a crystal melt, a crystal support holding a crystal movable with respect to the chamber for forming a bottom of the chamber with the crystal, a first heater adjacent the chamber for heating and maintaining a crystal melt within the chamber, a baffle connected to the first heater adjacent a bottom of the chamber, a second heater connected to the baffle beyond the first heater, a source of reactive gas, a controller connected to the source of reactive gas, a gas tube connected to the controller, a distributor connected to the gas tube and mounted in the chamber for positioning within the crystal melt, a gas releaser connected to the distributor for releasing reactive gas into the crystal melt, and a gas exhaust connected to the chamber for exhausting gas from the chamber above the crystal melt.
Continuous crystal plate growth process comprising supplying material from a starter material source, heating the material in a first hot zone supplying dopant into the material in the first hot zone for reducing heat in the material in a second reduced heat zone and forming a solid crystal plate from the material connected to the reduced heat zone for receiving a solid plate on a conveyor from the reduced heat zone and advancing the solid plate, heating a zone adjacent the conveyor to a lowered temperature for lowering temperature of the solid crystal plate on the conveyor, and enclosing the zones and the solid crystal plate in an enclosure and providing a controlled gaseous environment within the enclosure.
The process for purifying crystal starter material, comprising providing a chamber having a bottom and side walls, covering the chamber with a lid, introducing liquid or solid material into the chamber, releasing crystal starter material from an outlet near the bottom of the chamber, opening and closing the outlet, providing reactive gas connected to the chamber and into a bottom of the chamber, slowly releasing the reactive gas into the crystal starter material near the bottom of the chamber, withdrawing gas from the top of the chamber, and heating the chamber and the crystal starter material within the chamber.
The process for heating and purifying a crystal material, comprising providing a chamber having an inlet and an outlet, supplying material to the inlet and discharging a purified material from the outlet, providing a reactive gas to a gas distributor mounted in the chamber near the bottom, releasing the reactive gas from the distributor into the material in the chamber, heating material in the chamber, and exhausting gas from an upper portion of the chamber.
The crystal growth process comprising supporting a growing crystal, for heating the growing crystal and liquefying the growing crystal with a first zone heater adjacent the growing crystal, and re-liquefying the growing crystal with a second zone heater spaced from the first zone heater along the growing crystal.
The process for crystal growth, comprising holding a crystal melt in a chamber, holding a crystal in a crystal support, moving the support with respect to the chamber, forming a bottom of the chamber with a crystal, heating and maintaining a crystal melt temperature within the chamber, separating heating of the chamber from a crystal by a baffle adjacent a bottom of the chamber, heating the crystal with a second heater, releasing reactive gas into the crystal melt, and exhausting gas from the chamber above the crystal melt.
The process for heat treating crystals, comprising placing a formed and cut crystal on a platform, enclosing sides of the crystal, placing a lid on top of the crystal, applying inward force to the sides and the top to press the crystal inward, heating the crystal, increasing force on the crystal, maintaining force and heating the crystal for a predetermined time, reducing force and reducing heat, cooling the annealed crystal and withdrawing the cooled crystal.
A heating apparatus comprising a platform for supporting a formed and cut crystal and sides for enclosing sides of the crystal, a lid positioned over the platform such that the platform, lid and sides apply inward force to press the crystal inward, and at least one heater for heating the crystal while the crystal is under pressure from the platform lid and sides for annealing the crystal.
Dependencies are inferred from the claim text.