Semiconductor device and fabricating method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHISASHI OHTANI, TAMAE TAKANO, CHIHO KOKUBO
Life of this patent
Estimating the term…
Abstract
To effectively crystallize an amorphous semiconductor film comprising silicon by utilizing nickel element and remove nickel element contributed to the crystallization, a mask 103 is provided on an amorphous silicon film 102, oxide film patterns 107 and 108 including nickel are formed, phosphorus is doped in a region 109, thereafter, heating is performed, nickel element is diffused via paths 110 and 111 and nickel element diffuses in the amorphous silicon film and gettered by phosphorus at the region 109 by which crystallization of diffusion of nickel and gettering of nickel can be carried out simultaneously.
Claims24
A method of fabricating a semiconductor device comprising the steps of:
- making crystals grow from a region at a portion of an amorphous semiconductor film to other region thereof;
- making a catalyst element diffuse from the region of the portion of the amorphous semiconductor film, said catalyst element promoting crystallization of said semiconductor film;
- and
- gettering the catalyst element at said other region,
- wherein said crystals grow in accordance with movement of said catalyst element in said semiconductor film.
A method of fabricating a semiconductor device comprising the steps of:
- making crystals grow from a region of a portion of an amorphous semiconductor film to other region thereof;
- and
- making a catalyst element diffuse from the region of the portion of the amorphous semiconductor film and gettering the catalyst element at the other region simultaneously,
- wherein said crystals grow in accordance with movement of said catalyst element promoting crystallization of semiconductor.
A method of fabricating a semiconductor device comprising the steps of:
- making crystals grow from a region of a portion of an amorphous semiconductor film to other region thereof, said crystals growing in accordance with movement of a catalyst element promoting crystallization of semiconductor,
- wherein an origin of the movement of the catalyst element is formed at the region of the portion of the amorphous semiconductor film;
- and
- wherein a destination of the movement of the catalyst element is formed at the other region.
Dependencies are inferred from the claim text.