Method of generating a circuit pattern used for fabricating a semiconductor device
OwnerDae-Youp Leeinventor
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Abstract
A method of generating a circuit pattern of a semiconductor device, comprises sequentially depositing a first patternable layer and photoresist layer, converting a given depth of the photoresist layer into a second patternable layer insoluble in an alkaline solution, selectively etching the second patternable layer to form a photoresist pattern mask, applying an O2 plasma through the photoresist pattern mask to form a photoresist pattern in the unconverted part of the photoresist layer, and selectively etching the first patternable layer by using the photoresist pattern as a mask to obtain a fine circuit pattern.
Claims22
A method of generating a circuit pattern of a semiconductor device, comprising:
- sequentially depositing a first patternable layer and photoresist layer;
- converting a given depth of said photoresist layer into a second patternable layer insoluble in an alkaline solution;
- selectively etching said second patternable layer to form a photoresist pattern mask;
- applying an O2 plasma through said photoresist pattern mask to form a photoresist pattern in the unconverted part of the photoresist layer;
- and
- selectively etching said first patternable layer by using said photoresist pattern as a mask to obtain a fine circuit pattern.
Dependencies are inferred from the claim text.