Oxidation of silicon using fluorine implants
AssigneeAgere Systems Guardian Corp.
InventorsCHARLES WALTER PEARCE, DANIEL JOSEPH MCKEE, JEFFREY KENNETH HAAS
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Abstract
A method is disclosed for the oxidation of a substrate and the formation of oxide regions in the substrate by implantation of fluorine into the silicon lattice and subsequently forming an oxide region by a typical oxide growth process. The oxide growth process may be those such as thermal oxidation or the local oxidation of silicon. The process according to the present invention allows for the simultaneous growth of oxides having different thicknesses at the same time by tailoring the fluorine implantation.
Claims45
A method for forming an oxide on a material layer comprising:
- implanting fluorine into said material layer;
- and
- thermally treating said material layer to form an oxide layer.
A method for selectively forming an oxide on a substrate comprising:
- providing a substrate having a pattern layer thereon;
- implanting fluorine into said substrate through open areas in said pattern layer;
- removing said pattern layer;
- and
- thermally treating said substrate to form an oxide layer.
A method for forming an isolation region and at least one gate oxide layer on a substrate comprising:
- providing a substrate having a first pattern layer thereon;
- implanting fluorine into said substrate through open areas in said pattern layer;
- removing said pattern layer;
- thermally treating said substrate to form an isolation region;
- and
- thermally treating said substrate to form said at least one gate oxide layer.
A method for forming an isolation region and a gate oxide layer on a substrate comprising:
- providing a substrate having a first pattern layer thereon;
- implanting fluorine into said substrate through openings in said first pattern layer;
- removing said first pattern layer;
- forming a second pattern layer over said substrate;
- implanting fluorine into said substrate through openings in said second pattern layer;
- removing said second pattern layer;
- and
- thermally treating said substrate to simultaneously grow an isolation region and a gate oxide layer at least in areas of said substrate implanted with fluorine.
A method for forming oxide layers having differing thicknesses on a material layer comprising:
- implanting fluorine into said material layer at a first level;
- implanting fluorine into said material layer at a second level;
- thermally treating said material layer to form said oxide layers, wherein said oxide layers formed by oxidizing said material layer have different thicknesses.
Dependencies are inferred from the claim text.