Methods of manufacturing integrated circuit devices that include a metal oxide layer disposed on another layer to protect the other layer from diffusion of impurities and integrated circuit devices manufactured using same
AssigneeSamsung Electronics Co., Ltd.
InventorHag-ju Cho
Life of this patent
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Abstract
Integrated circuit devices are manufactured by exposing at least a portion of an insulation layer that comprises oxygen to a metal precursor that is reactive with oxygen so as to form a metal oxide layer on the portion of the insulation layer. The metal oxide layer may reduce the diffusion of impurities, such as hydrogen, into the insulation layer, which may degrade the electrical characteristics of the insulation layer.
Claims24
A method of manufacturing an integrated circuit device that comprises an insulation layer, the method comprising:
- exposing at least a portion of an insulation layer that comprises oxygen to a metal precursor that is reactive with oxygen so as to form a first metal oxide layer on the at least a portion of the insulation layer.
An integrated circuit device, comprising:
- a capacitor that comprises a lower electrode layer, a dielectric layer on the lower electrode layer, and an upper electrode layer on the dielectric layer;
- a first metal oxide layer that is disposed on an exposed portion of the dielectric layer and has a first density associated therewith;
- and
- a second metal oxide layer that encapsulates the capacitor and the first metal oxide layer and has a second density associated therewith that is greater than the first density.
A method of manufacturing an integrated circuit device, comprising:
- forming an insulation layer that comprises oxygen on a substrate;
- and
- forming a first metal oxide layer on at least a portion of the insulation layer by exposing the at least a portion of the insulation layer to a first metal precursor that is reactive with the oxygen in the insulation layer.
Dependencies are inferred from the claim text.