Method of manufacturing metal pattern of semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsWon-Sang Song, In-Sun Park, Kyung-Bum Koo, Young-Cheon Kim
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Abstract
A method of manufacturing a metal pattern of a semiconductor device. A Ti layer and a metal layer are successively formed on a semiconductor substrate or on an insulating layer. Then, a wiring pattern including a Ti layer pattern and a metal layer pattern is formed by patterning said Ti layer and the metal layer. Heat treating is employed under an atmosphere of a compound including nitrogen in order to react an exposed portion of the Ti layer pattern to form TiN as a main product, thereby increasing the stability and adhesiveness of the metal layer for subsequent processes.
Claims18
A method of manufacturing a metal pattern of a semiconductor device comprising:
- sequentially forming a Ti layer and then a metal layer on a substrate;
- forming a wiring pattern including a Ti layer pattern and a metal layer pattern by patterning and etching said Ti layer and said metal layer;
- and
- heat treating a resulting structure, under an atmosphere of a compound including nitrogen, to react an exposed portion of said Ti layer pattern to form TiN as a main product on exposed sidewalls of said Ti layer pattern.
A method of manufacturing a metal pattern of a semiconductor device comprising:
- forming a Ti layer and a metal layer on a substrate;
- forming a wiring pattern including a Ti layer pattern and a metal layer pattern by patterning said Ti layer and said metal layer;
- forming a metal nitride layer by depositing metal nitride on said wiring pattern;
- and
- etching said metal nitride layer to form a metal nitride pattern on exposed side walls of said Ti layer pattern and said metal layer pattern.
Dependencies are inferred from the claim text.