Back to results
US 2002/0001944 A1Published application
In-situ co-deposition of Si iN diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability
AssigneeTexas Instruments Incorporated
InventorsRichard A. Faust, Qing-Tang Jiang, Jiong-Ping Lu
Life of this patent
Estimating the term…
Abstract
A copper interconnect having a transition metal-silicon-nitride barrier (106). A transition metal-nitride is co-deposited with Si by reactive sputtering in a Si containing ambient to form barrier (106). The copper (110) is then deposited over the transition metal-silicon-nitride barrier (108) with good adhesion.
Claims12
A method of fabricating a diffusion barrier, comprising the steps of:
- co-depositing silicon and a transition metal nitride using reactive sputtering to form a transition metal-silicon-nitride.
A method of fabricating an integrated circuit, comprising the steps of:
- forming a dielectric layer over a semiconductor body;
- etching a trench in said dielectric layer;
- forming a transition metal-silicon-nitride layer over said dielectric layer including within said trench by reactive sputtering a transition metal nitride in a silicon-containing ambient;
- and
- forming a copper layer on said transition metal-silicon-nitride layer.
2 more elements
Dependencies are inferred from the claim text.