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US 2002/0001936 A1Published application
Semiconductor device and production method for the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTakashi Terauchi, Masahiro Shimizu
Life of this patent
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Abstract
Wires are formed on the main surface of a semiconductor substrate via a silicon oxide film. A nitride film is formed on the wires and the upper edge corner parts of the nitride film are rounded. Another nitride film, covering the nitride film, is formed and an interlayer oxide film is formed so as to cover this film. Contact holes are formed in the interlayer oxide film which reach the nitride film as well as the main surface of the semiconductor substrate and plug parts are formed within those contact holes.
Claims24
A semiconductor device comprising:
- a semiconductor substrate having a main surface;
- wires formed on said main surface with an insulation film interposed;
- a hard mask film on said wires;
- a nitride film covering said hard mask film and having rounded upper edge corner parts;
- an interlayer insulation film covering said nitride film;
- and
- plug parts formed within said interlayer insulation film.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate having a main surface;
- wires formed on said main surface with an insulation film interposed;
- a hard mask film on said wires;
- an oxide film formed on the side walls of said wires;
- a nitride film covering said hard mask film and said oxide film;
- an interlayer insulation film covering said nitride film;
- and
- plug parts formed within said interlayer insulation film,
- wherein the surfaces of said oxide film extends in the direction substantially perpendicular to said main surface without locally projecting to the side.
6 more elements
A semiconductor device comprising:
- a semiconductor substrate having a main surface;
- wires formed on said main surface with an insulation film interposed;
- a hard mask film on said wires;
- a side wall insulation film extending from the side walls of said wires to the side walls of said hard mask film;
- a nitride film formed on said side wall insulation film;
- an interlayer insulation film covering said nitride film;
- and
- plug parts formed within said interlayer insulation film.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate having a main surface;
- wires formed on said main surface with a first insulation film interposed;
- a hard mask film on said wires;
- a nitride film covering said hard mask film;
- an interlayer insulation film covering said nitride film and having contact holes which reach said main surface;
- a second insulation film covering the side walls of said contact holes;
- and
- plug parts formed within regions surrounded by said second insulation film.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate having a main surface;
- element isolation regions selectively formed on said semiconductor substrate;
- first and second wires which are formed on said main surface with an insulation film interposed and which extend on said element isolation regions;
- first and second hard mask films on said first and second wires;
- a nitride film covering said first and second hard mask films;
- an interlayer insulation film covering said nitride film;
- plug parts formed within said interlayer insulation film;
- first regions located on said isolation regions, where the gap between said first and said second wires is relatively wide;
- and
- second regions located on said isolation regions, where the gap between said first and said second wires is relatively narrow.
7 more elements
A semiconductor device comprising:
- a semiconductor substrate having a main surface;
- wires formed on said main surface with an insulation film interposed;
- a hard mask film on said wires;
- a first nitride film covering said hard mask film and the side walls of said wires;
- a second nitride film covering said first nitride film and extending on said main surface;
- an interlayer insulation film covering said second nitride film;
- and
- plug parts formed within said interlayer insulation film.
5 more elements
A process for a semiconductor device comprising the steps of:
- forming wires and a hard mask film on a main surface of a semiconductor substrate with an insulation film interposed;
- forming a nitride film so as to cover said hard mask film;
- rounding the upper edge corner parts of said nitride film;
- forming an interlayer insulation film so as to cover said nitride film;
- and
- forming plug parts within said interlayer insulation film.
3 more elements
A process for a semiconductor device comprising the steps of:
- forming wires and a hard mask film on a main surface of a semiconductor substrate with an insulation film interposed;
- rounding upper edge corner parts of said hard mask film;
- forming a nitride film so as to cover said hard mask film;
- forming an interlayer insulation film so as to cover said nitride film;
- and
- forming plug parts within said interlayer insulation film.
3 more elements
A process for a semiconductor device comprising the steps of:
- forming wires, which include a silicon film and a silicide film, and a hard mask film on a main surface of a semiconductor substrate with an insulation film interposed;
- sifting the sides of said silicide film toward insides of said wires from the sides of said silicon film;
- forming an oxide film on the side walls of said wires;
- forming a nitride film so as to cover said hard mask film and said oxide film;
- forming an interlayer insulation film so as to cover said nitride film;
- and
- forming plug parts within said interlayer insulation film.
4 more elements
A process for a semiconductor device comprising the steps of:
- forming wires and a hard mask film on a main surface of a semiconductor substrate with a first insulation film interposed;
- forming a second insulation film so as to cover said hard mask film;
- forming a side wall insulation film extending from the side walls of said wires to the side walls of said hard mask film by etching said second isolation film;
- forming a nitride film so as to cover said side wall insulation film;
- forming an interlayer insulation film so as to cover said nitride film;
- and
- forming plug parts within said interlayer insulation film.
4 more elements
A process for a semiconductor device comprising the steps of:
- forming wires and a hard mask film on a main surface of a semiconductor substrate with a first insulation film interposed;
- forming a nitride film so as to cover said hard mask film;
- forming an interlayer insulation film so as to cover said nitride film;
- forming contact holes in said interlayer insulation film;
- forming a second insulation film covering the side walls of said contact holes;
- and
- forming plug parts within regions surrounded by said second insulation film.
4 more elements
A process for a semiconductor device comprising the steps of:
- forming wires and a hard mask film on a main surface of a semiconductor substrate with an insulation film interposed;
- forming a first nitride film so as to cover said hard mask film;
- forming a side wall insulation film on the side walls of said wires and said hard mask film by etching said first nitride film;
- forming a second nitride film so as to cover said side wall insulation film and to extend on said main surface;
- forming an interlayer insulation film so as to cover said second nitride film;
- and
- forming plug parts within said interlayer insulation film.
4 more elements
Dependencies are inferred from the claim text.