Method for manufacturing gate in semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsKwang Chul Joo, Hai Won Kim
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Abstract
The present invention discloses a method for manufacturing a gate for semiconductor memory devices in which a TaON thin film is used as a gate dielectric film. The disclosed present invention comprises steps of forming a nitride thin film on a semiconductor substrate; forming an amorphous TaON thin film over the nitride films; subjecting the amorphous TaON thin film to effect a crystallization thereof; and forming a polysilicon film as an upper electrode over the crystallized TaON thin film.
Claims20
A method for manufacturing a gate in a semiconductor device, comprising steps of:
- forming a nitride film on a semiconductor substrate;
- forming an amorphous TaON thin film over the nitride film;
- crystallizing the amorphous TaON thin film;
- and
- forming a gate electrode over the crystallized TaON thin film.
A method for manufacturing a gate in a semiconductor device, comprising steps of:
- forming a first nitride film on a semiconductor device;
- forming an amorphous TaON thin film over the first nitride film;
- forming a second nitride film or nitrified film over the amorphous TaON thin film;
- subjecting the amorphous TaON thin film to a rapid thermal process or a furnace thermal process to effect a crystallization thereof;
- and
- forming a gate electrode over the crystallized TaON thin film.
Dependencies are inferred from the claim text.