MOSFET and fabrication method thereof
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsYoung-Kum Back, Yeon-Woo Cheong
Life of this patent
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Abstract
A MOSFET is fabricated by forming a trench in a semiconductor substrate, forming an insulating film in the trench, forming a gate electrode to fill in the trench, forming a gate oxide on the gate electrode, the insulating film and an adjacent portion of the semiconductor substrate, forming a first silicon film on the semiconductor substrate and on a portion of the gate oxide, and forming a second silicon film on a portion of the gate oxide on which the first silicon film is not formed. Since the thusly fabricated MOSFET has a controlled channel length, modeling of the device can be easily achieved and its mass-producibility is improved.
Claims21
A MOSFET, comprising:
- a semiconductor substrate having a trench formed therein;
- an insulating film formed in the trench;
- a gate electrode formed on the insulating film;
- a gate oxide formed on the gate electrode, on the insulating film and on an adjacent portion of the semiconductor substrate;
- a first silicon film formed on the semiconductor substrate and on a portion of the gate oxide;
- and
- a second silicon film formed on a portion of the gate oxide on which the first silicon film is not formed.
A fabrication method for a MOSFET, comprising the steps of:
- forming a trench in a semiconductor substrate;
- forming an insulating film in the trench;
- forming a gate electrode to fill in the trench;
- forming a gate oxide on the gate electrode, on the insulating film and on an adjacent portion of the semiconductor substrate;
- forming a first silicon film on the semiconductor substrate and on a portion of the gate oxide;
- and
- forming a second silicon film on a portion of the gate oxide on which the first silicon film is not formed.
Dependencies are inferred from the claim text.