Boron incorporated diffusion barrier material
AssigneeMicron Technology, Inc.
InventorsVishnu K. Agarwal, Gurtej S. Sandhu
Life of this patent
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Abstract
A diffusion barrier layer comprising TiNxBy is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier layer can also be fabricated by forming a TiNxBy layer using a TDMAT process including boron. The diffusion barrier layer can also be fabricated by forming a TiNxBy layer using a CVD process. The diffusion barrier layer is of particular utility in conjunction with tungsten or tungsten silicide conductive layers formed by CVD.
Claims23
A method of forming a gate electrode comprising:
- forming a gate oxide layer over a semiconductor substrate;
- forming a TiNxBy layer over at least a portion of the gate oxide layer;
- and
- forming a tungsten layer over at least a portion of the TiNxBy layer.
A method of forming an integrated circuit structure comprising:
- forming a dielectric layer;
- and
- combining tetrakisdimethyl-aminotitanium with a boron containing source gas to form a diffusion barrier over at least a portion of the dielectric layer.
A method of forming an integrated circuit structure comprising:
- forming a dielectric layer;
- forming a TiNxBy layer over at least a portion of the dielectric layer;
- and
- forming a conductive layer over at least a portion of the TiNxBy layer by combing tungsten hexafluoride and silicon tetrahydride.
A method of forming a gate electrode on a substrate, the method comprising:
- forming a gate oxide layer over a substrate;
- forming a TiN layer between the gate oxide layer and the conductive layer;
- incorporating boron into the TiN layer to form a barrier layer;
- and
- forming a tungsten layer over at least a portion of the barrier layer.
A method of forming an integrated circuit structure, the method comprising:
- forming a dielectric layer;
- forming a barrier layer over the dielectric layer;
- forming a conductor layer above the dielectric layer wherein the conductor layer releases fluorine atoms;
- and
- inhibiting at least a portion of the fluorine atoms from diffusing into the dielectric layer.
Dependencies are inferred from the claim text.