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US 2002/0001906 A1Published application
Method of manufacturing a gate in a semiconductor device
OwnerDae Gyu Parkinventor
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Abstract
A method of manufacturing a gate in a semiconductor device is disclosed. The method forms a TiAlN film as a barrier layer between a gate insulating film and a metal gate by CVD method or PVD method resulting in the prevention of a leakage current and the obtaining of a low threshold voltage.
Claims16
A method of manufacturing a gate in a semiconductor device, comprising the steps of:
- forming a gate insulating film on a semiconductor substrate;
- forming a TiAlN film on the gate insulating film;
- forming a metal layer on the TiAIN film;
- forming an insulating film on the metal layer;
- patterning the insulating film to expose at least part of the metal layer;
- etching the exposed part of said metal layer, said TiAlN film and said gate insulating film using said patterned insulating film as a mask thereby forming a gate;
- and
- removing said insulating film.
5 more elements
Dependencies are inferred from the claim text.