Simple stack cell capacitor formation

An integrated circuit crown structure for use in a DRAM cell on a substrate comprising:

• a common source/drain region disposed within said substrate;
• a bitline connected to said common source/drain region;
• a gate oxide disposed over a channel region;
• at least two wordline gates disposed over said gate oxide;
• a storage node source/drain disposed within said substrate;
• a storage node contact contacting said storage node source/drain;
• a crown bowl having a top, a side and a bottom, said bowl disposed over, and contacting said storage node contact, said bowl being disposed within adjacent supporting layers formed over said wordline gates;
• a stopper nitride disposed surrounding said crown bowl within said adjacent support structures;
• and
• a crown extending from said top of said bowl;
• wherein said crown bowl bottom is formed, and electrically isolated from, said bitline without being exposed to etching agents during its formation and without forming a solely stem supported wine glass structure at any stage of fabrication which seals against the outer perimeter of said bowl and wherein said stopper nitride layer seals against the outer perimeter of said bowl.

A method of fabricating a polysilicon storage node structure of an integrated circuit crown capacitor with the storage node having a stem connected to a storage node contact and a cup, with said cup having a bottom and an oval wall top, said method comprising:

• forming a storage node contact and forming a bitline cap oxide layer;
• forming over said storage node contact and said bitline cap oxide layer;
• forming a nitride layer over said storage node contact and said bitline cap oxide layer
• forming a dummy oxide over said nitride layer;
• forming a cup opening through said dummy oxide layer and said nitride layer;
• and
• at least partially etching through said cap oxide layer;
• depositing polysilicon to form a cup bottom and oval wall top;
• etching said dummy oxide;
• wherein said nitride layer is in direct contact with said polysilicon wall and said a crown said stem is not exposed to etching agents;