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US 2002/0001893 A1Published application
Method of manufacturing a capacitor in a semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsKyong Min Kim, Han Sang Song, Dong Jun Kim
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Abstract
A method of manufacturing a capacitor in a semiconductor device wherein a first a Ru film used as a lower electrode is deposited by an LPCVD method, a mixed plasma process of Ar and H2 is performed, and a second Ru film is deposited by an LPCVD method, thus improving the surface roughness of the Ru film. The method can obtain a high capacitance and a low leakage current in a capacitor using a Ta2O5 film as a dielectric film.
Claims10
A method of manufacturing a capacitor in a semiconductor device, comprising the steps of:
- providing a semiconductor substrate in which a predetermined structure is formed;
- depositing a first Ru film on said substrate;
- processing said first Ru film by exciting a mixed plasma of Ar and H2;
- depositing a second Ru film on said first Ru film to form a second Ru film;
- patterning the second Ru film to form a lower electrode;
- forming a Ta2O5 film on the entire structure;
- forming a TiN film on the entire structure;
- and,
- patterning the TiN film to form an upper electrode.
6 more elements
Dependencies are inferred from the claim text.