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AssigneeChromux Technologies, Inc.
InventorsDong-Il Cho, Sangwoo Lee, Sangjun Park
Estimating the term…
An isolation method for a single crystalline silicon microstructure using a triple layer structure is disclosed. The method includes forming the triple layer composed of an insulation layer formed over an exposed surface of the silicon microstructure, a conductive layer formed over the entire insulation layer, and a metal layer formed over a top portion of the microstructure; and partially etching the conductive layer to form electrical isolation between parts of the microstructure. The method does not require a separate photolithography process for isolation, and can be effectively applied to microstructures having high aspect ratios and narrow trenches. Also disclosed are single crystalline silicon microstructures having a triple layer isolation structure formed using the disclosed method.
A method for forming an electrode in a micromachined structure, the method comprising:
An isolation method for a silicon microstructure, comprising:
A system having a microstructure formed in a substrate by micromachining, the microstructure having released structures, the system further comprising a layer structure for electrically isolating portions of the microstructure, the layer structure comprising an insulation layer formed over released surfaces of the silicon microstructure, a conductive layer formed over the insulation layer including over sidewalls of the released structures, the conductive layer having gaps for electrically isolating portions of the silicon microstructure, and a metal layer formed over portions of the microstructure.
Dependencies are inferred from the claim text.