Semiconductor device provided with boost circuit consuming less current

A semiconductor device, comprising:

• a voltage detecting portion detecting a potential at a first node supplied with a boosted potential;
• a clock signal generation circuit generating an source clock signal in accordance with an output from said voltage detecting portion;
• and
• a boosting portion boosting an externally applied external power supply potential in accordance with said source clock signal for applying said boosted potential to said first node, said boosting portion including
• a precharge circuit precharging a second node to a prescribed potential,
• a boost circuit boosting a potential at said second node in accordance with said source clock signal,
• a first field effect transistor of a first conductivity type connected between said first and second nodes,
• a first drive circuit driving a gate potential of said first field effect transistor in accordance with said source clock signal,
• a second field effect transistor of a second conductivity type connected between said first and second nodes, and
• a second drive circuit driving a gate potential of said second field effect transistor in accordance with said source clock signal.