Loading patent…
AssigneeCasio Computer Co., Ltd.
InventorsOsamu Kuwabara, Takeshi Wakabayashi, Ichiro Mihara
Estimating the term…
A semiconductor device includes a semiconductor substrate having bump electrodes and a sealing film formed thereon, the sealing film having laminated layers. The semiconductor device is mounted to another circuit substrate via the bump electrodes. The sealing film interposed between adjacent bump electrodes is prepared by laminating a protective film and each layer of the sealing film on the lower surface of the base film, on the bump electrodes, followed by allowing the bump electrodes to project through the sealing film under pressure and heat. The thickness of the sealing film is smaller than the height of the bump electrode, and thus the bump electrode projects through the sealing film. The stress derived from the difference in thermal expansion coefficient between the semiconductor substrate and the circuit substrate is absorbed by the projecting portion of the bump electrode. In forming the sealing film, particles for lowering the thermal expansion coefficient are dispersed in the sealing film to allow the sealing layers to exhibit a thermal expansion coefficient differing in its thickness direction such that the thermal expansion coefficient in the layer which is close to the semiconductor substrate is close to that of the semiconductor substrate so as to absorb the stress derived from the difference in thermal expansion coefficient between the semiconductor substrate and the sealing film. By absorbing the stress derived from the difference in thermal expansion coefficient between the semiconductor substrate and the circuit substrate and between the semiconductor substrate and the sealing film, a defective connection can be prevented so as to improve the reliability.
A semiconductor device, comprising:
A method of manufacturing a semiconductor device including a semiconductor substrate having a plurality of bump electrodes formed thereon and a sealing film including a plurality of layers laminated one upon the other, the thickness of each layer of the sealing film being smaller than the height of the bump electrode, comprising:
A method of manufacturing a semiconductor device including a semiconductor substrate having a plurality of bump electrodes formed thereon, and a sealing film formed on that portion of the semiconductor substrate which is positioned between adjacent bump electrodes and including a plurality of layers laminated one upon the other, the thickness of each layer of the sealing film being smaller than the height of the bump electrode, comprising:
A method of manufacturing a semiconductor device including a plurality of bump electrodes formed on a semiconductor substrate and a sealing film formed on that portion of the semiconductor substrate which is positioned between adjacent bump electrodes and including a plurality of laminated layers, comprising:
A method of manufacturing a semiconductor device including a plurality of bump electrodes formed on a semiconductor substrate and a sealing film formed on that portion of the semiconductor substrate which is positioned between adjacent bump electrodes, comprising:
A method of manufacturing a semiconductor device including a plurality of bump electrodes formed on a semiconductor substrate and a sealing film formed on that portion of the semiconductor substrate which is positioned between adjacent bump electrodes, comprising the steps of:
Dependencies are inferred from the claim text.