Structure for a semiconductor device
OwnerEn Jun Zhuinventor
Life of this patent
Estimating the term…
Abstract
An exemplary embodiment of the invention is a semiconductor device comprising a substrate of a first conductivity type and a subcollector of a second conductivity type provided on the substrate. An intrinsic epitaxial layer is formed on the substrate. A collector region of the second conductivity type is adjacent the subcollector and a base region of the first conductivity type is adjacent the collector region. An emitter region of the second conductivity type is adjacent the base region and the emitter region has an emitter size. The subcollector and collector region both have a size not substantially greater than the emitter size. An alternate embodiment includes a spacer layer formed between the emitter region and the base region.
Claims16
A semiconductor device comprising:
- a substrate of a first conductivity type;
- an intrinsic epi-layer on the substrate;
- a subcollector of a second conductivity type provided on the substrate;
- a collector region of the second conductivity type adjacent the subcollector;
- a base region of the first conductivity type adjacent the collector region;
- and
- an emitter region of the second conductivity type adjacent the base region, the emitter region having an emitter width and an emitter length;
- said subcollector having a subcollector width substantially equal to the emitter width,
- said collector region having a collector width substantially equal to the emitter width;
- said collector region having a collector length substantially equal to the emitter length.
A semiconductor device comprising:
- a substrate of a first conductivity type;
- a subcollector of a second conductivity type provided on the substrate;
- a collector region of the second conductivity type adjacent the subcollector;
- a base region of the first conductivity type adjacent the collector region;
- an emitter region of the second conductivity type adjacent the base region;
- and
- a spacer layer positioned between said emitter region and said base region.
Dependencies are inferred from the claim text.