Semiconductor device having reduced sheet resistance of source/drain regions

A method of manufacturing a semiconductor device, comprising the steps of:

• forming an electrode on a main surface of a semiconductor substrate with a first insulating film therebetween;
• forming a second insulating film on said semiconductor substrate to cover said electrode;
• forming sidewall insulating films, one on each side surface of said electrode, by anisotropically etching said second insulating film;
• and
• forming a pair of conductive regions on said semiconductor substrate such that said pair of conductive regions sandwich said electrode from both sides, wherein
• said step of forming sidewall insulating films includes the step of forming recessed portions, on said sidewall insulating films, exposing a surface of said semiconductor substrate by removing portions of said sidewall insulating films in contact with and in the vicinity of said main surface of said semiconductor substrate having suffered damage from anisotropic etching, and
• the step of forming said pair of conductive regions includes
• the step of forming a pair of impurity regions respectively on the main surface of said semiconductor substrate such that said pair of impurity regions sandwich said electrode from both sides, and
• the step of forming conductive layers, electrically connected to said impurity regions, on said main surface of said semiconductor substrate including exposed surfaces of said semiconductor substrate to fill said recessed portions.