Semiconductor device having a gate electrode with a sidewall insulating film and manufacturing method thereof

A semiconductor device comprising:

• a silicon semiconductor substrate;
• a groove section formed to a specific depth from a surface of the semiconductor substrate so as to separate the silicon semiconductor substrate into a plurality of regions;
• an element isolation region which is formed by burying at least a first and second insulating films differing in silicon epitaxial growth rate sequentially in the groove section and which defines element forming regions on said silicon semiconductor substrate;
• a gate electrode selectively formed on a first region of the element forming region of the silicon semiconductor substrate defined by said element isolation region via a gate insulation film;
• a source region and a drain region formed in a second region of the element forming region of the surface of said silicon semiconductor substrate, said first region being sandwiched between the source region and the drain region;
• and
• a silicide film formed so as to cover from said source region and drain region to the first insulating film in said element isolation region of said silicon semiconductor substrate, wherein
• said first insulating film is made of a material whose silicon epitaxial growth rate is higher than that of said second insulating film.

A semiconductor device manufacturing method comprising:

• selectively forming a gate insulating film, a gate electrode whose shape is defined by its sidewall and top surface, and a cap material on a semiconductor substrate;
• forming a sidewall film on said semiconductor substrate so as to cover the sidewall of said gate electrode;
• exposing an upper part of the sidewall of said gate electrode from said sidewall film;
• and
• growing an epitaxial film in a direction of gate length at the exposed upper part of the sidewall of said gate electrode.

A semiconductor device manufacturing method comprising:

• forming a groove with a specific depth from a surface of a semiconductor substrate;
• forming a first insulating film with a high silicon epitaxial growth rate so as to cover a surface of said groove;
• forming a second insulating film with a lower silicon epitaxial growth rate than that of the first insulating film on said first insulating film in said groove;
• selectively forming a gate insulating film and a gate electrode in a stacked manner on said semiconductor substrate between groove sections each isolated by said first and second insulating films;
• forming a source region and a drain region at the surface of said semiconductor substrate between said groove sections and said gate electrode;
• and
• growing a silicon film epitaxially from the surface of said source region and said drain region to at least a surface of said first insulating film.