Semiconductor device and method of manufacturing the same
OwnerAkira Nishiyama, Masato Koyamainventors
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Abstract
Disclosed is a semiconductor device comprising a semiconductor substrate and a circuit element using an insulating film formed on the semiconductor substrate. The insulating film contains a silicon compound containing at least one element selected from the group consisting of an oxygen and a nitrogen, and a metal compound containing a metal other than silicon and at least one element selected from the group consisting of an oxygen and a nitrogen. Nano-crystals are formed in the insulating film. The size of the nano-crystal is small enough to permit observation of a polycrystalline ring as a diffraction image when an electron beam having a beam diameter of the nanometer order is incident in parallel to the insulating film surface.
Claims15
A semiconductor device comprising:
- a semiconductor substrate, and
- a circuit element using an insulating film formed on said semiconductor substrate,
- said insulating film containing a silicon compound containing at least one element selected from the group consisting of an oxygen and a nitrogen, and a metal compound containing a metal other than silicon and at least one element selected from the group consisting of an oxygen and a nitrogen, nano-crystals being formed in said insulating film, the size of said nano-crystal being small enough to permit observation of a polycrystalline ring as a diffraction image when an electron beam having a beam diameter of the nanometer order is incident in parallel to said insulating film surface.
A method of manufacturing a semiconductor device, comprising:
- forming insulating film being a mixed film including a silicon compound containing at least one element selected from the group consisting of an oxygen and a nitrogen, and a metal compound containing a metal other than silicon and at least one element selected from the group consisting of an oxygen and a nitrogen on a semiconductor substrate under temperatures at which crystallization does not take place;
- and
- applying a heat treatment to precipitate a nano-crystalline metal oxide within said mixed film.
Dependencies are inferred from the claim text.