Continuous good step coverage cvd platinum metal deposition
AssigneeMicron Technology, Inc.
InventorGARO J. DEDERIAN
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Abstract
A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas over an organic platinum based metal precursor until the non-reactive gas is saturated with the precursor. The platinum based metal film is deposited onto a substrate in a CVD deposition chamber in the presence of both oxygen and nitrous oxide at a predetermined temperature and under a predetermined pressure. The resulting film is consistently smooth and has good step coverage.
Claims45
A method for depositing a platinum group metal on a substrate, comprising the steps of:
- depositing said platinum group metal onto a substrate in a CVD deposition chamber in the presence of both oxygen and nitrous oxide at a predetermined temperature and pressure.
A method for depositing a platinum group metal on a substrate, comprising the steps of:
- introducing a substrate into a CVD deposition chamber;
- bubbling a gas over an organic platinum based metal precursor;
- introducing said gas and said organic platinum based metal precursor to said CVD deposition chamber;
- introducing oxygen to said CVD deposition chamber;
- introducing nitrous oxide to said deposition chamber;
- and
- depositing said platinum group metal onto said substrate in said CVD deposition chamber at a predetermined temperature and pressure.
A method for depositing platinum onto a substrate, comprising the steps of:
- introducing a substrate into a CVD deposition chamber;
- bubbling a non-reactive gas over an organic platinum precursor selected from the group consisting of cyclopentadienyl trimethylplatinum (IV) and methylcyclopentadienyl trimethylplatinum CH3(C5H5)Pt(CH3)3;
- introducing said non-reactive gas and said organic platinum precursor to said CVD deposition chamber;
- introducing a 50/50 mixture by volume of oxygen and nitrous oxide to said CVD deposition chamber;
- depositing said platinum group metal onto said substrate in said CVD deposition chamber at a temperature of from about 200 to about 600° C. and pressure of from about 1 to about 1000 Torr to form a continuous film on said substrate with good step coverage.
The method according to claim 254, wherein said non-reactive gas is selected from the group consisting of nitrogen, helium, neon, argon, krypton, and xenon.
A capacitor comprising:
- a first electrode and a second electrode;
- a dielectric provided between said electrodes;
- and
- wherein at least one of said first and second electrodes is formed of a continuous platinum group metal formed in the presence of both oxygen and nitrous oxide.
A capacitor comprising:
- a first electrode and a second electrode;
- a dielectric provided between said electrodes;
- and
- wherein at least one of said first and second electrodes is formed by depositing platinum in a CVD deposition chamber in the presence of both oxygen and nitrous oxide at a predetermined temperature and pressure.
Dependencies are inferred from the claim text.