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US 2002/0000587 A1Published application
Method for forming capacitor of nonvolatile semiconductor memory device and the capacitor
AssigneeHynix Semiconductor Inc.
InventorsNam Kyeong Kim, Ki Seon Park, Dong Su Park, Byoung Kwon Ahn, Seung Kyu Han
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Abstract
In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.
Claims26
A method for forming a capacitor of a nonvolatile semiconductor memory device, comprising the steps of:
- forming a TaON glue layer over a semiconductor substrate;
- forming a lower electrode on the TaON glue layer;
- forming a ferroelectric film on the lower electrode;
- and
- forming an upper electrode on the ferroelectric film.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a TaON glue layer formed over the semiconductor substrate;
- a lower electrode formed on the TaON glue layer;
- a ferroelectric film formed on the lower electrode;
- and
- an upper electrode formed on the ferroelectric film.
3 more elements
Dependencies are inferred from the claim text.