Scalable manufacture process for power mosfet with fully self-aligned shrinkable gate and drain

A method for fabricating a MOSFET device supported on a substrate of a first conductivity type, comprising steps of:

• (a) growing a first oxide layer on said substrate followed by implanting said first oxide layer with ions of a second conductivity type;
• (b) forming a second oxide layer on top of said first oxide layer and a silicon nitride layer on top of said second oxide layer;
• (c) applying a mask for patterning said first oxide layer, said second oxide layer and said silicon nitride layer into a plurality of nitride-oxide blocking segments;
• and
• (d) applying a diffusion temperature for growing a gate oxide layer on a top surface of said substrate between said nitride-oxide blocking segments and for diffusing said ions of said second conductivity in said first oxide layer to form source/drain regions of said second conductivity type in said substrate under said nitride-oxide blocking segments.

A method for fabricating a semiconductor power device supported on a substrate of a first conductivity-type comprising steps of:

• (a) forming a first insulation layer on said substrate followed by implanting said first insulation layer with ions of a second conductivity type;
• (b) forming a second insulation layer on top of said first insulation layer and an etch-resist insulation layer on top of said second insulation layer;
• (c) applying a mask for patterning said first insulation layer, said second insulation layer and said etch-resist insulation layer into a plurality of resist-insulation blocking segments;
• and
• (d) applying a diffusion temperature for growing a gate oxide layer on a top surface of said substrate between said resist-insulation blocking segments and for diffusing said ions of said second conductivity in said first insulation layer to form source/drain regions of said second conductivity type in said substrate under said resist-insulation blocking segments.

A MOSFET power device supported on a substrate of a first conductivity type comprising:

• a plurality metal-gate segments disposed over a gate oxide layer and a plurality of source/drain metal segments each disposed over a corresponding drain or source region of a second conductivity in said substrate;
• a plurality of insulating nitride-oxide blocking each disposed between a corresponding gap between said source/drain metal segment and said metal-gate segment;
• and
• each of said nitride-oxide blocking segments includes a nitride layer disposed above a second oxide layer, and said second oxide layer disposed above a first oxide layer disposed over a top surface of said substrate.