Spin-valve transistor
AssigneeKabushiki Kaisha Toshiba
InventorsRie Sato, Koichi Mizushima
Life of this patent
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Abstract
A spin-valve transistor has an emitter, a base including a spin-valve film in which two magnetic layers are stacked with interposing a nonmagnetic layer between the two magnetic layers, and a collector, the spin-valve film having a stacked structure of M/A/M′ or M/B/M′ and the spin-valve film being (100)-oriented, where each of M and M′ includes at least one element selected from the group consisting of Fe, Co, Ni and an alloy including Fe, Co, Ni, A includes at least one element selected from the group consisting of Au, Ag, Pt, Cu and Al, and B includes at least one element selected from the group consisting of Cr and Mn.
Claims15
A spin-valve transistor, comprising:
- an emitter;
- a base comprising a spin-valve film in which two magnetic layers are stacked with interposing a nonmagnetic layer between the two magnetic layers;
- and
- a collector;
- the spin-valve film having a stacked structure of M/A/M′ or M/B/M′ and the spin-valve film being (100)-oriented,
- where each of M and M′ comprises at least one element selected from the group consisting of Fe, Co, Ni and an alloy including Fe, Co, Ni;
- A comprises at least one element selected from the group consisting of Au, Ag, Pt, Cu and Al;
- and B comprises at least one element selected from the group consisting of Cr and Mn.
A spin-valve transistor, comprising:
- a spin-valve film comprising a first magnetic layer and a second magnetic layer stacked with interposing a nonmagnetic layer between the first and the second magnetic layers, the spin-valve film being (100)-oriented;
- a first electrode electrically connected to the first magnetic layer;
- a second electrode electrically connected to the second magnetic layer;
- wherein each of the first and the second magnetic layers comprises at least one element selected from the group consisting of Fe, Co, Ni and an alloy including Fe, Co, Ni;
- the nonmagnetic layer comprises at least one element selected from the group consisting of Au, Ag, Pt, Cu, Al, Cr and Mn.
A spin-valve transistor manufactured by a process comprising:
- forming a first electrode on a substrate being (100)-oriented by epitaxial growth;
- forming a first magnetic layer on the first electrode;
- forming a nonmagnetic layer on the first magnetic layer;
- forming a second magnetic layer on the nonmagnetic layer;
- forming a second electrode on the second magnetic layer,
- wherein the first magnetic layer, the nonmagnetic layer and the second magnetic layer are formed with a deposition rate within the range of 0.01 nanometers per second to 0.1 nanometers per seconds.
Dependencies are inferred from the claim text.